国家/地区 中国（12） 美国（8） 世界知识产权组织（5） 韩国（4） 欧洲专利局（EPO）（3） 台湾（3） 日本（2）
IPC部 C（17）
IPC大类 C23（17） C01（8） H01（5）
B82（4） B05（3） B32（3）
C30（2）
IPC小类 C23C（17） C01B（8） B82Y（4）
H01L（4） B05D（3） B32B（3）
C30B（2）
IPC C23C014/48（17）
发明人 DI Z（3） DONG L（2） LI X（2）
VEERASAMY V（2） VEERASAMY V S（2） XUE Z（2）
ZHANG Y（2） ZHENG P（2）
公开年 2010（2） 2011（2） 2012（2） 2018（2） 2023（2）
申请年 2012（3）  2018（3）  2009（2） 
专利权人 SHANGHAI INS.（4） GUARDIAN GLA.（2） GUARDIAN IND.（2）

Graphene processing device for providing low energy injection ion for use in e.g. biological medicine application, has upper electrode net and the lower electrode net through which plasma generated by plasma coil discharge passes so as to process sample located on sample seat in processing chamber.

WANG W, JIANG C, WANG Y, WANG H

Preparing aluminum-based powder core wire useful for boiler water cooling wall arc spraying comprises taking pure aluminum strip as outer skin of wire material, rolling into U shape, adding nickel, chromium, iron boride, titanium diboride and graphene powder into U-shaped groove and drawing mold.

LU X, SONG X, XIAO H, ZHANG Y

Method for growing layer thickness controllable graphene on single crystal ferromagnetic film substrate, involves cooling graphene layers to room temperature to obtain graphene with controllable layer thickness on single crystal ferromagnetic thin film substrate.

GUO Y, ZHANG Q, PENG J, LI P, HU J, WU R, PAN M, QIU W

Preparing sulfur ion implanted nano diamond-graphene composite film involves mixing and dispersing diamond powder and glycerin uniformly, polishing single crystal silicon wafer by using obtained diamond powder polishing paste.

HU X, JIANG M, CHEN C, LI X

High-heat radiation thin film for use as heat radiation material for e.g. electronic device, comprises carbon layer arranged on metallic board, where thickness of metallic board is specific value and carbon layer is made up of graphene.

MIN E H, CHO S H, CHOI B K, HONG M E, HO C S, KEUN C B, CHO S

Method for directly preparing graphene quantum dot array on insulating substrate, involves subjecting germanium quantum dot array in structure to oxidative volatilization treatment to remove germanium quantum dot array.

DI Z, ZHENG P, DONG L, XUE Z

Directly preparing graphene on insulating substrate comprises e.g. providing an insulating substrate, forming germanium layer and grapheme layer on upper surface of insulating substrate from bottom to top, and removing germanium layer.

DI Z, ZHENG P, DONG L, XUE Z

Manufacturing method of coated article with graphene-inclusive thin film, involves mechanically removing graphene on major surface of nickel layer and graphene initially formed at interface of silicon layer and nickel layer.

VEERASAMY V S, VEERASAMY V

Nitrogen-ion-implanted three-dimensional self-assembled graphene useful as tissue support biomaterial, has graphene sheet structure with preset diameter and magnitude, and comprises preset amount of nitrogen.

CAO Y, HOU X, LI D, ZHAO M, LI X, LIU X

Preparation of graphene involves injecting germanium ion to silicon carbide substrate, annealing obtained structure, breaking silicon carbide substrate to silicon and carbon, combining silicon and germanium, and recombining carbon.

DI Z, CHEN D, DING G, WANG G, XIE X, ZHANG M, YE L, ZHENG X, LU Z