国家/地区 美国（16）
IPC部 C（16）
IPC大类 C23（16）
IPC小类 C23C（16）
IPC C23C016/26（16）
发明人 IFUKU R（3） MATSUMOTO T（3） HONG B H（2）
SUGIURA M（2） UEDA H（2） WADA M（2）
公开年 2021（6） 2016（2） 2022（2）
申请年 2020（5）  2021（3）  2017（2） 
专利权人 APPLIED MATE.（3） TOKYO ELECTR.（3） GRAPHENE SQU.（2） HONG B H（2）

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Using deposition system involves loading wafer into processing chamber equipped with RF system, supplying aromatic hydrocarbon precursor into processing chamber, turning on RF power of RF system to decompose aromatic hydrocarbon precursor into active radicals.

WU C, NI I, HSU Y, HUANG J, XU Y, WU Z

Formation of film involves preparing substrate containing conductive film formed on base substrate, forming composite layer containing graphene layer, and electrically connecting conductive film with former film through composite layer.

NI Z, MATSUMOTO T, IFUKU R, YOU W

Film forming by cleaning interior of treatment container, extracting and removing oxygen inside treatment container, introducing substrate into treatment container, and forming carbon film on substrate by plasma chemical vapor deposition.

MAKOTO W, TAKASHI M, NOBUTAKE K, RYOTA I, MASAHITO S, HIROKAZU U, MATSUMOTO T, KABURAGI N, IFUKU R, SUGIURA M, UEDA H, WADA M, KABUKI N

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Processing device for forming film, consists of processing container having thermal sprayed ceramic coating on inner wall, mounting table for holding substrate and control unit for performing precoating and film forming.

WADA M, MATSUMOTO T, SUGIURA M, IFUKU R, UEDA H, KURYOTA L

Treating particles for repairing defects in fullerene or graphene containing nanoparticles involves disaggregating, deagglomerating, exfoliating, cleaning, functionalizing, doping, decorating and/or repairing particles.

BUCKLAND J, WALTERS D

Graphene deposition process for deposition of graphene on substrates, involves generating radio frequency plasma at location proximate to substrate, while flowing precursor gas containing carbon through plasma and over substrate.

CHEN Z, CHUGH S, MEHTA R