国家/地区 中国（12）
IPC部 C（12）
IPC大类 C23（12）
IPC小类 C23C（12） C01B（6） B82Y（3）
H01L（3） B01J（2） B05D（2）
IPC C23C016/26（12）
发明人 LIU J（3） RAO Z（3） XIA Y（3）
CHEN J（2） CHUNG H（2） CHUNG H J（2）
HEO J（2） HEO J S（2） HUANG L（2）
HUH J（2） HUH J S（2） JUNG H（2）
JUNG H J（2） KANG S（2） KANG S R（2）
公开年 2011（10）
申请年 2010（12）
专利权人 INST MICROEL.（3） JIAXING MICR.（3） CHINESE ACAD.（2） SAMSUNG ELEC.（2）

Forming recrystallized metal layer for growing graphene monolayer involves forming metal layer on substrate; forming layer of dielectric material on the metal layer; and directionally recrystallizing the metal layer.

YAGER T A

Method of growing graphene directly on substrate involves placing substrate material into plasma-enriched chemical vapor phase deposition cavity, vacuumizing, heating substrate, and supplying carbureted hydrogen gas and other inert gas.

SHI D, ZHANG G, ZHANG L

Method of transferring larger-sized graphene used in electric circuit, involves removing adhesive and protection layers from graphene layer respectively.

BAE S, CHUNG H, HEO J, JUNG M, KANG S, SEO D, SEO S, WOO Y, BAE S K, CHUNG H J, HEO J S, JUNG M H, KANG S R, SEO S A, WOO Y S, JUNG H J, HUH J S, YEO R, HUH J, JUNG H

Fabricating graphene to fabricate FET, comprises forming alloy catalyst layer on substrate using sputtering method and/or evaporation method, and forming graphene layer on alloy catalyst layer by supplying hydrocarbon gas onto substrate.

WOO Y, SEO D, SEO S, CHUNG H, KANG S, HEO J, SEO S A, CHUNG H J, KANG S R, HEO J S, WOO Y S, JUNG H J, HUH J S, YEO R, XU D, HUH J, JUNG H

Preparation of single-atom layer graphene film comprises performing chemical absorption and halogenation between diazomethane and aerated gas iodine simple substance to form instable carbon-iodine key, and irradiating.

LIU J, XIA Y, RAO Z

Manufacture of graphene film material involves growing graphene film on copper substrate, providing on silicon substrate, dissolving copper substrate in ferric nitrate solution, depositing graphene film, drying, cleaning and cooling.

ZHANG X, JIANG J, YU W, ZHANG L

Manufacture of graphene involves adding iron catalyst into oxygen-free reactor, supplying gas carbon source into reactor and reacting.

LIU H, LIU Y, XUE Y, WU B, YU G, GUO Y, CHEN J, HUANG L, GENG D

Electrically activating a structure having graphene layers formed on a silicon carbide layer comprises subjecting the structure to an oxidation process.

MCFEELY F R, YURKAS J J, OIDA S, HANNON J B

Preparing single atomic layer graphene film comprises placing silicon carbide substrate in reaction cavity of atomic layer deposition device, feeding carbon source gas into cavity, halogenating and generating corresponding by-product.

LIU J, RAO Z, XIA Y

Carbon chemical adsorbing useful for preparing of graphene thin film by atom layer deposition, comprises forming covalent bond with an atom on surface of a substrate by forming a substance containing carbon atoms having unbounded electrons.

LIU J, RAO Z, XIA Y