国家/地区 中国（5） 美国（5） 韩国（2） 台湾（2） 世界知识产权组织（2）
IPC部 C（10）
IPC大类 C23（10）
IPC小类 C23C（10） C01B（5） H01L（4）
IPC C23C016/34（10）
发明人
公开年 2021（5） 2022（4）
申请年 2021（10）
专利权人

Preparation method of in-situ packaged two-dimensional material in e.g. electronics field, involves forming first material layer by cleavage of first material on substrate, and forming second material layer between first layer and substrate.

GAO H, YANG H, BIAN C

Visualizing distribution and intrinsic orientation of periodically spaced one-dimensional structures by depositing electrically conductive solid film of imaging material onto surface of two-dimensional material, providing polarization microscope, and imaging layered composite at acquisition angles.

AMADO E, KRESSLER J

Apparatus for depositing two-dimensional material, comprises planar high-frequency antenna formed on second surface of dielectric window, and first gas nozzle configured to provide source gas into chamber.

SHIN H, SHIN K, LEE C, LEE C S, SHIN K W, SHIN H J

LED display device useful in organic LED display device, has electrode pin provided with an LED light-emitting device, surface of the third heat dissipation layer provided with a fourth heat dissipation layer and first heat dissipation layer includes aluminum powder and graphene.

ZHANG Y, DENG W

Forming bulk product utilized for forming real-world components, involves coating particulate conductive phase material with binder phase using deposition coating process, and forming coated conductive phase material into bulk material.

SHEEDY P, SCHMIDT W R

Transparent electrode for photovoltaic cells, comprises transparent substrate and composite layer including graphene layer and nanoparticles that are embedded in graphene layer and extended through thickness of graphene layer.

ELSAYED K A M, MAAROUF A A

Semiconductor device e.g. monolithic three-dimensional integrated circuit, has microelectronic components embedded in single crystalline dielectric material, where material contains carbon with diamond structure or hexagonal boron nitride.

CLARK R D, CLARK R

Processing gear pair surface comprises carrying out chemical and mechanical polishing of gear pair prototype, coupling coating layer with base lubricating oil with anti-friction and wear additive and adding oil into gear box body.

LI J, LUO J, ZHANG R, SUN S

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K

Vanadium pentoxide heat-sensitive film with sandwich structure used for silicon-based semiconductor, comprises substrate layer, buffer layer, and heat-sensitive layer including vanadium pentoxide layers and carrier concentration increasing layer located between adjacent vanadium pentoxide layers.

HUANG L, LU H, MA Z, WANG C, FANG M, CAI G, GAO J, HUANG S