国家/地区 中国（40） 美国（17） 韩国（11） 世界知识产权组织（10） 欧洲专利局（EPO）（4） 日本（4） 台湾（3） 德国（2）
IPC部 C（58） H（12） B（11）
IPC大类 C23（58）
IPC小类 C23C（58） C01B（17） H01L（11）
B82Y（6） C30B（4） C04B（2）
H01J（2）
IPC C23C016/458（58）
发明人 LI X（6） LIU X（4） JIN H（3）
LIU Z（3） PENG P（3） WANG H（3）
BOL A A（2） CAI J（2） CHEN J（2）
CUI H（2） FENG Y（2） JEONG S（2）
LAI Y（2） LEE J（2） LI G（2）
公开年 2022（14） 2018（8） 2021（8） 2013（5） 2012（4） 2016（4） 2020（4） 2023（4） 2014（2） 2015（2） 2017（2）
申请年 2021（12）  2022（9）  2016（5）  2018（5）  2019（5）  2020（5）  2011（4）  2013（4）  2012（3）  2017（3）  2014（2） 
专利权人 BEIJING GRAP.（4） LI X（3） SAMSUNG ELEC.（3） UNIV PEKING（3）
CHANGZHOU ER.（2） DEHUA LIXIN .（2） GUANGDONG MO.（2） INT BUSINESS.（2）
PENG P（2） PIXELED DISP.（2） UNIV JILIN（2）

High temperature furnace tube for use in semiconductor process, has supporting plate distributed with multiple layers for supporting multiple substrates, where each substrate is placed on each layer of supporting plate.

WANG H, ZHANG S, SHEN H, LV C, ZHOU D, KIM J, PARK J S, WANG J, JIA S, ZHANG X, KIM Y

Chuck assembly used in semiconductor device fabrication system, comprises chuck base includes lower base and upper base that is on lower base, ceramic plate on upper base, and isolator ring enclosing outer sidewall of lower base.

JUNG U, SHIN M, SUNG D, NA D, KIM D, KIM K, JEONG S, JUNG S H, KIMKYUNGSUN, KIM D W, SUNG D Y, SU S M, JUNGUNGYO

Substrate processing apparatus for manufacturing semiconductor device, comprises substrate support to support multiple substrates such that substrates are on substrate support, chamber sidewall surrounding side surface of substrate support, and upper plate having plate portions on substrate support.

OH S, AN S, LEE J, JEONG G, JUNG K O, LEE J H, AHN S J, OH S R

Processing central supporting rod useful for vapor deposition coating device by making ceramic material in rod body, installing supporting cap, mixing polyvinyl alcohol, water in glue, solidifying isolation in contact layer, applying glue on supporting cap, inserting locating rod in locating hole.

LIU W

Mechanism for moving substrate carrier through chemical vapor deposition system, has moveable arm for operating in chamber including first pressure and temperature, and motor located outside chamber in environment including second pressure.

NAVEH D, STERN C, BENNAIM Y, ISMACH A, KAUFMAN T, BARRABI E, MENTOVICH E, ROTEM Y, GRIDISH Y

Growing large size graphene crystal domain at low temperature by plasma enhanced chemical vapor deposition method, comprises putting high-purity copper foil in faraday cage, and placing cage in plasma-enhanced chemical vapor deposition reaction chamber.

ZHEN Z, ZHANG R, XU Z, HE L, LI N

Preparing graphene film, comprises moving growth substrate in reaction chamber at predetermined speed under action of conveying mechanism along with supporting structure until reaction chamber is conveyed out.

GUO B, QU Y, TAN H, SHEN D, WANG W

Composite base system for thin film deposition device, has first base comprising top surface and bottom surface opposite to each other, and radio frequency heating coil coaxially surrounded around second base.

LIU L, ZHENG D, XU C

Apparatus for depositing two-dimensional material, comprises planar high-frequency antenna formed on second surface of dielectric window, and first gas nozzle configured to provide source gas into chamber.

SHIN H, SHIN K, LEE C, LEE C S, SHIN K W, SHIN H J

Carrier plate structure for preparing single crystal silicon heterojunction solar cell, has graphite frame whose front and back surfaces are provided with coating structure, where coating structure is symmetrically arranged.

YANG M, LIU M