国家/地区 世界知识产权组织（10）
IPC部 C（10）
IPC大类 C23（10）
IPC小类 C23C（10） C01B（7） H01L（5）
IPC C23C016/458（10）
发明人
公开年 2013（2） 2015（2）
申请年 2013（3）  2014（2） 
专利权人

High temperature furnace tube for use in semiconductor process, has supporting plate distributed with multiple layers for supporting multiple substrates, where each substrate is placed on each layer of supporting plate.

WANG H, ZHANG S, SHEN H, LV C, ZHOU D, KIM J, PARK J S, WANG J, JIA S, ZHANG X, KIM Y

Mechanism for moving substrate carrier through chemical vapor deposition system, has moveable arm for operating in chamber including first pressure and temperature, and motor located outside chamber in environment including second pressure.

NAVEH D, STERN C, BENNAIM Y, ISMACH A, KAUFMAN T, BARRABI E, MENTOVICH E, ROTEM Y, GRIDISH Y

Coating metal workpiece e.g. electrical connector, involves exposing workpiece to carbon-containing precursor gas and hydrogen gas at preset flow rate and total gas pressure, and exposing to carbon-containing precursor gas and carrier gas.

ADAMS H J

Susceptor has first fluoro polymer layer that is arranged on first surface of susceptor portion, and graphene layer is arranged on first fluoro polymer layer.

VISSER R J, JEONG S, DODABALAPUR A

Apparatus for separating carbon-containing structures in form of nanotubes or graphene, has plate-shaped component that is arranged in process chamber housing and inserted in retaining recess formed in wall of process chamber housing.

RIPPINGTON D E, JOUVRAY A, RUPESINGHE N L, TEO K, TEO K B K, RUPESINGHE N

Forming graphene, useful as e.g. electrical or thermal conductive substrate, comprises placing and heating a substrate within reaction chamber, introducing carbon precursor into chamber, and forming graphene layer on surface of substrate.

LIU X, MANLEY R G, MORENA R M, SONG Z

Forming graphene film on one or more surfaces of metal substrate involves heating metal substrate defining one or more surfaces to exposure temperature, and restricting metal flux from one or more surfaces at the exposure temperature.

VAN BAARLE D, VAN RIJN R

Film-forming apparatus for forming graphene film on film-forming target e.g. metallic foil, has roll-to-roll mechanism which provides tensile force relaxation unit that relaxes tensile force applied to transported film-forming target.

KOBAYASHI T, SHIMIZU K, KADONO K, MIZUGUCHI Y, MURAKAMI Y, MIZUKUCHI Y, SUMINO K

Method for depositing layer onto workpiece e.g. graphene using plasma, involves orientating workpiece with respect to source material to prevent direct propagation of ejected atoms from source material to work surface of workpiece.

QIU X, YANG H, SHIN Y J

Synthesizing graphene, comprises loading catalyst metals into chamber, increasing sizes of grains of catalyst metals, raising temperature inside the chamber while providing vapor carbon source and forming graphene.

SONG Y, KIM H, HONG B, AHN J, AHN J H, HONG B H, KIM H K, SONG Y I