国家/地区 美国（19） 韩国（12） 世界知识产权组织（11） 台湾（8） 中国（7） 日本（7） 德国（2） 欧洲专利局（EPO）（2） 新加坡（2）
IPC部 C（24）
IPC大类 C23（24）
IPC小类 C23C（24）
IPC H01J037/32（24）
发明人 IFUKU R（3） MATSUMOTO T（3） CHOI J（2）
HONG B H（2） NARKEVICIUTE I（2） SUGIURA M（2）
UEDA H（2） VARADARAJAN B N（2） WADA M（2）
公开年 2021（8） 2022（4） 2023（4） 2018（2）
申请年 2020（7）  2021（6）  2013（2）  2015（2）  2017（2）  2022（2） 
专利权人 APPLIED MATE.（3） SAMSUNG ELEC.（3） TOKYO ELECTR.（3） GRAPHENE SQU.（2）
HONG B H（2） LAM RES CORP（2） UNIV TAIWAN .（2）

Graphene processing device for providing low energy injection ion for use in e.g. biological medicine application, has upper electrode net and the lower electrode net through which plasma generated by plasma coil discharge passes so as to process sample located on sample seat in processing chamber.

WANG W, JIANG C, WANG Y, WANG H

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Chuck assembly used in semiconductor device fabrication system, comprises chuck base includes lower base and upper base that is on lower base, ceramic plate on upper base, and isolator ring enclosing outer sidewall of lower base.

JUNG U, SHIN M, SUNG D, NA D, KIM D, KIM K, JEONG S, JUNG S H, KIMKYUNGSUN, KIM D W, SUNG D Y, SU S M, JUNGUNGYO

Device for producing graphene layer, has one electrode which is connected to positive pole of voltage source, and other electrode that is connected to negative pole and is provided for carbon ions accumulate in graphene attachment region so as to form graphene layer.

KREISCHER U

Apparatus for depositing two-dimensional material, comprises planar high-frequency antenna formed on second surface of dielectric window, and first gas nozzle configured to provide source gas into chamber.

SHIN H, SHIN K, LEE C, LEE C S, SHIN K W, SHIN H J

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Semiconductor component useful in plasma reaction device and plasma etching process of process gas e.g. carbon tetrafluoride and oxygen, comprises conductive heat conducting material filled in pores of first corrosion resistant coating.

NI T, CHEN X, ZHU S

Selective deposition on dielectric layer comprises providing semiconductor substrate, selectively depositing graphene on exposed metal surface of metal layer of substrate, and selective depositing dielectrically-deposited material on layer.

NARKEVICIUTE I, VARADARAJAN B N, SHARMA K, NARKEBICHUDDER I

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A