国家/地区 台湾（26）
IPC部 C（26）
IPC大类 C01（26）
IPC小类 C01B（26） H01L（26） C23C（13）
B82Y（10） C30B（6） H01J（4）
B32B（3） B82B（3） B01J（2）
B05D（2） C04B（2） C07C（2）
C25D（2） H01B（2）
IPC H01L021/02（26）
发明人 BERRY V（2） DIXON S（2） FAN S（2）
GUINEY I（2） LU C（2） SEACRIST M R（2）
YAMAGUCHI J（2）
公开年 2022（7） 2013（6） 2014（4） 2021（4）
申请年 2013（6）  2021（6）  2022（3）  2009（2）  2012（2）  2020（2） 
专利权人 TAIWAN SEMIC.（3） APPLIED MATE.（2） CALIFORNIA I.（2） DOKURITSU GY.（2）
EMPIRE TECHN.（2） FUJITSU LTD（2） HON HAI PREC.（2） NAT INST ADV.（2）
PARAGRAF LTD（2） SUNEDISON SE.（2） UNIV TSINGHU.（2）

Transistor for semiconductor device, has channel layer that comprises graphene layer and hexagonal boron nitride sheets dispersed in graphene layer and arrangement directions of hexagonal boron nitride sheets that are aligned and source/drain region next to gate stack that is obtained.

CHEN Z, CHU Z, CHEN T, CHUU C

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Plasma enhanced chemical vapor deposition method used in semiconductor structure, comprises turning on radio frequency source of radio frequency system to decompose aromatic hydrocarbon precursor into multiple active radicals at specific frequency to form graphene layer on magnetic layer.

WU Z, NI I, XU Y, HUANG J, WU C, HSU Y, HUANG J Z, HSU Y H

Method for preparing FET e.g. junction FET, involves providing interdigital electrode on graphene nanoribbon composite structure, where electrode covers set of protrusions and is electrically connected to set of graphene nano-ribbons.

ZHANG T, ZHANG L, JIN Y, LI Q, FAN S

Forming graphene on flexible substrate, involves providing polymer substrate including metal structure, carbon source and carrier gas, and subjecting polymer substrate to plasma enhanced chemical vapor deposition process.

TSENG C, LIN C, YEH N, LEU C, LU C

Semiconductor device e.g. monolithic three-dimensional integrated circuit, has microelectronic components embedded in single crystalline dielectric material, where material contains carbon with diamond structure or hexagonal boron nitride.

CLARK R D, CLARK R

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A