国家/地区 美国（23） 中国（17） 韩国（16） 日本（10） 世界知识产权组织（9） 欧洲专利局（EPO）（8） 德国（2）
IPC部 C（39）
IPC大类 H01（39） C01（30） C23（17）
B32（7） B01（4） B82（4）
C30（3） B81（2） C09（2）
IPC小类 H01L（39） C01B（30） C23C（17）
B32B（7） B01J（3） B82Y（3）
C30B（3） B81C（2） C09D（2）
IPC H01L021/02（39）
发明人 MIHASHI F（4） MITSUHASHI F（4） TATENO Y（4）
UENO M（4） FUKIDOME H（3） OKADA M（3）
SUEMITSU M（3） CHO S（2） CHO S M（2）
HWANG J H（2） JEON M H（2） KIM M J（2）
PARK C（2） PARK C H（2） SEO S（2）
公开年 2017（39）
申请年 2016（22）  2017（11）  2015（6） 
专利权人 SUMITOMO ELE.（4） UNIV TOHOKU（3） GRAPHENEA SA（2） HANWHA TECHW.（2）
SAMSUNG ELEC.（2） UNIV INJE IN.（2）

Apparatus for producing transition metal dichalcogenide (TMD) transistor arrays of electronic device, has single-layer transition metal dichalcogenide formed only on substrate and lateral edges of monolayer graphene film.

PARK J, GAO H, GUIMARAES M H D, RALPH D C, KANG K, XIE S

Method for transferring graphene from surface of substrate to other substrate, involves affixing growth substrate onto surface of transitory substrate, delaminating graphene layer from substrate, and transferring layer onto target surface.

LERNER M, PAN D, GOLDSMITH B, AFSAHI S J

Manufacture of porous graphene layer used for e.g. textile industries, involves carrying out chemical vapor deposition of carbon source on catalytically active substrate which catalyzes graphene formation, and forming graphene.

PARK H G, HEIGHT M, CHOI K, PARK H

Graphene-based LED epitaxial growth method, involves depositing silicon-doped n-type gallium nitride layer, active layer, p-type aluminum gallium nitride layer and magnesium-doped gallium nitride layer on substrate, and cooling.

XU P

Graphene substrate useful in transistor as electronic device, comprises a substrate having an adhesion force, a graphene layer provided on the substrate and a dielectric layer provided on the graphene layer.

JEONG S J, KIM H S, KIM Y S, PARK S J, KIM H J, SEOL D H, YANG J H

Preparing large-area regular epitaxial graphene doped with metal atoms comprises e.g. taking monocrystal silicon carbide substrate as growth substrate, heating the monocrystal silicon carbide sample and degassing.

HU T, MA F, XU K, MA D, LIU X, ZHANG X

Stacked body for use in electronic device, has exposed surface which is being main surface opposite to substrate, and regions each including graphene layers and having circumcircle with predetermined diameter range.

OKADA M, MITSUHASHI F, UENO M, TATENO Y, SUEMITSU M, FUKIDOME H, MIHASHI F

Stacked body used in electronic device such as transistor ,has graphene film arranged on first main surface and having atomic arrangement oriented in relation to atomic arrangement of silicon carbide forming substrate.

OKADA M, MITSUHASHI F, TATENO Y, UENO M, SUEMITSU M, FUKIDOME H, MIHASHI F

Surface processing method for graphene substrate of e.g. organic LED used in electronic device, involves forming organic material on one portion of graphene and surface-processing and forming dielectric thin film on organic material.

JAE Y B, SE J K, HYUN J S

Substrate for electronic device, such as a field-effect transistor, includes graphene film having atomic arrangement oriented in relation to atomic arrangement of material forming the surface layer region of support substrate.

OKADA M, MITSUHASHI F, TATENO Y, UENO M, MIHASHI F