国家/地区 美国（15） 韩国（13） 中国（7） 世界知识产权组织（6） 欧洲专利局（EPO）（5） 日本（5） 印度（3） 台湾（3） 加拿大（2） 法国（2）
IPC部 C（19）
IPC大类 C23（19）
IPC小类 C23C（19） H01L（19） B82Y（4）
C01B（3） C25D（3） B01J（2）
B05D（2） B22F（2） C04B（2）
C30B（2） H01M（2）
IPC H01L021/02（19）
发明人 SHIN H（5） SHIN H J（4） BYUN K（3）
BYUN K E（3） AHN W（2） AHN W S（2）
CHO Y（2） CHO Y C（2） GABEN F（2）
KIM H（2） KIM H S（2） LEE C（2）
LEE C S（2） LEE J（2） SHEN X（2）
公开年 2021（15） 2020（3）
申请年 2020（19）
专利权人 SAMSUNG ELEC.（6） UNIV SUNGKYU.（2）

Formation of patterned layer of material involves selectively irradiating selected portion of support layer during deposition process to form layer of deposited material in pattern defined by selected portion.

PARAYIL VENUGOPALAN S, KURGANOVA E, FARAMARZI V

Growing two-dimensional transition metal chalcogenide film for manufacturing e.g. diode, involves placing patterned metal layer on substrate surface, supplying chalcogen precursor and transition metal precursor to chamber, and evacuating.

LEE E, AHN W, KIM H, LEE H, LEE H S, KIM H S, AHN W S, HA L

Producing hexagonal boron nitride or graphene two-dimensional composite material, involves obtaining obtaining germanium substrate, depositing hexagonal boron nitride on germanium substrate by controlling area and depositing graphene.

LEE J, HYEON S H, HYEONG S

Manufacture of lithium-ion battery used for e.g. phone and laptop, involves e.g. depositing dense layer comprising anode, cathode and/or electrolyte, by supplying substrate and suspension of non-agglomerated nanoparticles of material having preset size, and performing densification of dried layer.

GABEN F

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Manufacturing semiconductor device involves heating second layer of first unit includes first layer, second layer, and third layer. The first layer includes support layer, second layer includes compound containing carbon.

MIGITA T

Graphene structure used in electronic device, comprises substrate, and directly grown graphene directly grown on surface of substrate and has controlled surface energy, which has increased surface energy of directly grown graphene.

LEE C, LEE S, SHIN H, BYUN K, SHIN K, SHIN K W, BYUN K E, SHIN H J, LEE S Y, LEE C S

Masking block used e.g. to form pattern comprises base substrate, gamma-alumina thin film disposed on base substrate, and hexagonal boron nitride thin film doped with carbon and oxygen and disposed on gamma-alumina thin film.

LEE D, PARK J, PARKJAEHYUN, LEE D J

Doping method involves stacking sacrificial layer on doped layer, arranging doping material on the sacrificial layer, arranging electrodes on doping material and doped layer, and doping doping material into doped layer.

SON K, KIM T, SON A

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I