国家/地区 中国（19）
IPC部 C（19）
IPC大类 C01（19）
IPC小类 C01B（19） C30B（19） C23C（10）
B82Y（8） H01L（5） B82B（3）
B01D（2） B01J（2） H01B（2）
IPC C01B032/186（19）
发明人 SONG Z（2） WANG H（2） WANG X（2）
XIE X（2）
公开年 2017（4） 2021（4） 2011（2） 2012（2） 2015（2） 2023（2）
申请年 2016（4）  2020（3）  2012（2）  2021（2）  2022（2） 
专利权人 SHANGHAI INS.（2）

Preparing graphene crystal using plasma enhanced chemical vapor deposition device involves placing insulating substrate in synthesis chamber, pumping synthesis chamber to vacuum, introducing growth gas, generating plasma and transversely growing graphene small crystal nucleus on insulating substrate.

MA S, LIU B

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Method for reducing nucleation density of graphene, involves passing gas into quartz tube to normal pressure after vacuuming and turning OFF heating and gas supply of tube furnace and cooling tube furnace to room temperature after growth of graphene is completed.

YUAN L

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Chemical vapor deposition (CVD) graphene production device comprises movably connected support base, multiple graphene growth substrates and top cover, where support base is ring-shaped closed structure.

ZHANG B, LI J, WANG X, XU Z

Preparing wafer-level single crystal copper foil comprises cutting edges of polycrystalline copper foil to obtain polycrystalline copper foil with notches, and annealing in hydrogen atmosphere to obtain single crystal copper foil.

LI Y, LI L, CHEN Z, SU C, TIAN B

Preparing ferromagnetic film epitaxial single-layer graphene involves forming a ferromagnetic film with regular hexagonal lattice properties on an insulating substrate, and matching the insulating substrate properties.

PAN M, QIU W, HU J, LI P, PENG J, HU Y, ZHANG Q

Preparing single-layer single crystal graphene comprises e.g. pretreatment of copper foil, substrate annealing, growing, and cooling down.

WEN Y, HUANG R, HUANG Z, LAI F

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Preparation of dendritic monocrystalline graphene for e.g. sensor, involves cleaning copper foil substrate with acetic acid and acetone, pre-annealing and pre-oxidizing substrate, chemical vapor depositing and cooling substrate.

TU R, ZHANGCHI T, ZHANG S, ZHANG L