国家/地区 美国（114）
IPC部 C（114）
IPC大类 C23（114） C01（77） H01（61）
B82（38） C30（21） B01（19）
B32（13） B05（7） G01（7）
C04（6） C25（5） C09（4）
C03（3） A61（2） B22（2）
IPC小类 C23C（114）
IPC C23C016/02（114）
发明人 SHIN H（11） SHIN H J（10） BYUN K（7）
BYUN K E（7） LEE C（7） LEE C S（7）
MATSUMOTO T（7） NAGEL C J（6） SHIN K（6）
SHIN K W（6） BRODEUR C L（5） ELSAYED K A M（5）
LEE E（5） MAAROUF A A（5） CHOI J（4）
公开年 2021（21） 2013（14） 2016（11） 2022（11） 2023（10） 2017（9） 2020（7） 2014（6） 2015（6） 2012（5） 2018（5） 2011（4） 2009（2） 2019（2）
申请年 2020（20）  2016（13）  2021（13）  2022（13）  2013（11）  2011（7）  2012（7）  2014（7）  2017（7）  2015（5）  2018（3）  2019（3）  2008（2）  2010（2） 
专利权人 SAMSUNG ELEC.（17） TOKYO ELECTR.（7） UNIV CALIFOR.（7） QUANTUM ELEM.（6）
UNIV IMAM AB.（5） UNIV SUNGKYU.（5） APPLIED MATE.（4） UNIV SUNGKYU.（3）
UNIV XIDIAN（3） CENT NAT REC.（2） CHINESE ACAD.（2） CORNING INC（2）
DENG P（2） ECOLE POLYTE.（2） GEN GRAPHENE.（2） GUO H（2）
HONDA MOTOR .（2） HONG B H（2） INT BUSINESS.（2） KOREA INST S.（2）

Forming graphene involves pretreating surface for processing using one or more pretreating flowrates of substrate gas scavenging gas composition or annealing gas composition, in presence of one or more pretreating temperatures, to produce contaminant-depleted surface.

PHILPOTT R, BARAKET M, SHERRILL V

Depositing nanoscale-thin film in preselected area on substrate for area-selective atomic layer deposition based on electron beam patterning of chemical functional groups, involves depositing layer of functionalizing molecule onto or adjacent to first surface of substrate.

YOUNG M J, MASCHMANN M R

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Substrate processing apparatus for manufacturing semiconductor device, comprises substrate support to support multiple substrates such that substrates are on substrate support, chamber sidewall surrounding side surface of substrate support, and upper plate having plate portions on substrate support.

OH S, AN S, LEE J, JEONG G, JUNG K O, LEE J H, AHN S J, OH S R

Layer structure for use in integrated circuit device, comprises lower layer, ion implantation layer in lower layer, and carbon-based material layer on ion implantation layer, and ion implantation layer includes carbon, and further has high electrical performance with ultra small structure.

YOO M, BYUN K, KIM S, LEE C, LEE C S, BYUN K E, YOO M S

Process for instantiating elemental metal within ultramicro pore of nanoporous carbon powder composition involves initiating gas flow in reactor assembly, reactor chamber containing nanoporous carbon powder, first porous frit, second porous frit, reactor head space, and computer processing unit.

BRODEUR C L, NAGEL C J

Transparent electrode for solar cell, comprises transparent substrate and composite layer disposed on transparent substrate, where composite layer comprises graphene layer and set of nanoparticles, where nanoparticles are embedded in graphene layer and extend through thickness of graphene layer.

ELSAYED K A M, MAAROUF A A

Preparing solar cell involves heating substrate deposited with nanoparticles, forming composite layer with graphene layer, cooling, disposing transparent substrate having quartz, glass and polymers such as polymethylmethacrylate, polystyrene, fabricating electrode, forming cathode and electrolyte.

ELSAYED K A M, MAAROUF A A

Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber, injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed, generating plasma of reaction gas in reaction chamber.

LEE C, JUNG A, SHIN H, SHIN K, SHIN K W, SHIN H J, JUNG A R, LEE C S

Formation of graphene layer for semiconductor device, involves exposing substrate comprising conductive and dielectric materials to plasma to clean conductive material, and exposing substrate to another plasma to form graphene layer.

MEBARKI B, CHUA T C, VALENCIA C W, LEE J J, TANG X, CHEN X