国家/地区 美国（13） 韩国（9） 世界知识产权组织（5） 中国（4） 日本（2）
IPC部 C（19）
IPC大类 C23（19）
IPC小类 C23C（19）
IPC C23C016/26（19）
发明人 LEE C（3） LEE C S（3） AHN S J（2）
AN S（2） BYUN K（2） BYUN K E（2）
ELSAYED K A M（2） IFUKU R（2） KIM K（2）
LI J（2） MAAROUF A A（2） MALLICK A B（2）
MATSUMOTO T（2） OH S（2） OH S R（2）
公开年 2023（19）
申请年 2022（14）  2021（4） 
专利权人 SAMSUNG ELEC.（5） APPLIED MATE.（3） TOKYO ELECTR.（2） UNIV IMAM AB.（2）

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Substrate processing apparatus for manufacturing semiconductor device, comprises substrate support to support multiple substrates such that substrates are on substrate support, chamber sidewall surrounding side surface of substrate support, and upper plate having plate portions on substrate support.

OH S, AN S, LEE J, JEONG G, JUNG K O, LEE J H, AHN S J, OH S R

Method for processing semiconductor, involves material layer formed on portion of liner and metal-containing layer, where layer of material comprises graphene and portion of material layer on liner is removed.

MALLICK A B, SINGHA R S, GHOSH S, ROY S S

Method for preparing anti-oxidation bonding alloy silver wire containing graphene on surface in microelectronic packaging field, involves using polystyrene as carbon source to grow graphene on surface of copper plating layer to obtain bonded silver wire containing graphene on surface.

LI Y, LI S

Processing substrate involves carrying substrate having silicon-containing film on surface of substrate into processing container, forming adsorption layer, forming silicon oxide layer, and forming graphene film on silicon oxide layer by supplying carbon-containing gas into processing container.

FURUYA H, YAMADA H, IFUKU R, MATSUMOTO T, WADA M, HARUHIKO F A

Manufacture of wiring used in electronic device, involves growing graphene layer on substrate using plasma of hydrocarbon at specific temperature by plasma enhanced chemical vapor deposition, and doping graphene layer with metal.

LEE C, LEE M, SHIN H, BYUN K, KIM K, SHIN K, SHIN K W, KIM K B, BYUN K E, SHIN H J, HYUN L, LEE C S

Layer structure for use in integrated circuit device, comprises lower layer, ion implantation layer in lower layer, and carbon-based material layer on ion implantation layer, and ion implantation layer includes carbon, and further has high electrical performance with ultra small structure.

YOO M, BYUN K, KIM S, LEE C, LEE C S, BYUN K E, YOO M S