国家/地区 美国（15） 世界知识产权组织（10） 韩国（9） 日本（6） 中国（5） 欧洲专利局（EPO）（4） 法国（2）
IPC部 C（17）
IPC大类 C01（17） H01（17） B82（14）
B05（4） B32（4） C23（4）
B01（2）
IPC小类 C01B（17）
IPC H01L021/02（17）
发明人 HIURA H（2） TSUKAGOSHI K（2）
公开年 2012（11） 2013（5）
申请年 2011（17）
专利权人 NAT INST MAT.（2） NEC CORP（2） SAMSUNG ELEC.（2）

Synthesizing graphene sheet on platinum silicide, by forming stack by e.g. placing first layer of diffusion barrier material on substrate and placing second layer of silicon carbonaceous material on first layer and thermally treating stack.

ZENASNI A

Making graphene layers involves forming article that comprises carbon-containing self-assembled monolayer; depositing layer of nickel on monolayer; heating article in reducing atmosphere; and cooling to convert monolayer to graphene layer.

MALIAKAL A J

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A

Manufacture of graphene nanomesh used for e.g. manufacturing semiconductor device, involves depositing several particles having carbon absorption property on graphene at predetermined temperature or more, heating and removing particles.

SATO S, IWAI T

Improving electrical characteristics of graphene device, involves providing graphene device with ferroelectric film on substrate having graphene layer and applying specified voltage on graphene device.

GANG B S, HUI H B, HYEON A J

Graphene substrate manufacture method involves welding silicon substrates so that the dielectric layer and silicon substrate are provided in opposite directions such that the dielectric layer and metal catalytic layer are removed.

WAN J J, JUNG J W

Manufacture of graphene substrate for semiconductor element, involves contacting metal layer and carbon-containing layer, heating to dissolve carbon in carbon-containing layer, and cooling to deposit carbon in metal layer.

HIURA H, TSUKAGOSHI K

Fabricating graphene oxide material involves providing substrate; depositing graphene layer onto substrate; and oxidizing portion of graphene layer, with dry oxidation technique for period of time sufficient to obtain band gap.

GHARIB M, ARIA A I, GANI A W

Graphene structure for producing three-dimensional shape of e.g. electronic circuit, comprises template having three-dimensional shape and rod shape, graphene to cover portion of outer circumference of template, and supporting layers.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T