国家/地区 美国（11） 日本（5） 世界知识产权组织（5） 中国（3） 韩国（3） 欧洲专利局（EPO）（2）
IPC部 C（12）
IPC大类 C01（12） H01（12） B32（3）
B82（2） C23（2） C30（2）
IPC小类 C01B（12）
IPC H01L021/02（12）
发明人 SATO S（2） YAMAGUCHI J（2）
公开年 2014（6） 2015（5）
申请年 2014（12）
专利权人 FUJITSU LTD（2） NAT INST ADV.（2） SAMSUNG ELEC.（2）

Graphene nano-ribbon array for e.g. FET, has graphene nanoribbons formed along armchair crystallographic direction of graphene, where long axes of graphene nanoribbons are oriented along direction of germanium substrate.

ARNOLD M S, JACOBBERGER R M

Method of forming multilayer graphene structure for use in e.g. nanoelectronics, involves growing graphene layer on growth substrate by removal of portion of sacrificial layer.

SUH H, JEON I, SONG Y J, WU Q, JUNG S, JEON I S, JUNG S J, SUH H S, SONG Y

Electrical device e.g. photodetector, has multi-layer graphene structure for laterally contacting single-layer graphene part, and graphite part in contact with surface of multi-layer graphene structure.

RUHL G, FOERG R

Graphene film in which many ribbon-shaped graphenes having a longitudinal edge structure of an arm chair type constitute a network structure used for manufacturing electronic device and top gate top contact thin film transistor.

YAMAGUCHI J, SATO S

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Formation of graphene-boron nitride interface used in e.g. formation of graphene-boron nitride heterostructure, involves exposing ruthenium substrate to ethylene, and sequentially exposing resultant substrate to oxygen and borazine.

SUTTER P W, SUTTER E A

Graphene film for manufacture of electronic apparatus, comprises preset number of six-membered carbon rings which are linked and aligned in short direction, and edge structure along long direction which is completely of armchair-type.

YAMAGUCHI J, SATO S, YAMADA H, TANAKA K, YAMADA Y

Laminate used for field effect transistor, has mica, self-assembled film formed on mica, and graphene film formed on self-assembled film in which each of molecules has hydrophobic principal chain.

FUJII TAKESHI, SATO MARIKO, FUJII T, SATO M

Preparing graphene, which is used for manufacturing semiconductor circuit, comprises supplying gas including carbon dioxide, methane and water on metal catalyst, and reacting and cooling the resultant.

SON I H, LEE S J

Method for selective transfer of graphene onto substrate, involves heating localized portions of thermal release tape and diminishing adhesive properties of tape at portions such that graphene from portions is transferable to substrate.

PATIL V, KIM Y, KUMAR K, YANG E