国家/地区 日本（28）
IPC部 C（28）
IPC大类 H01（28） C01（17） H05（10）
C09（6） C23（6） C08（5）
B32（4） B82（3） C04（3）
C25（3）
IPC小类 H01L（28）
IPC H01L023/373（7） C01B032/186（6） C01B032/194（6）
C23C016/26（6） H01L021/02（6） H01L023/36（6）
H01L029/786（5） H05K007/20（5） C01B032/182（4）
H01L021/205（4） B82Y040/00（3） C01B032/21（3）
C08K003/04（3） C09J011/04（3） C09J133/08（3）
发明人 ICHIKAWA I（3） ISAO I（3） MATSUMOTO T（3）
TAKEO Y（3） YOSHINOBU T（3） HAYASHI K（2）
HUANG H（2） IFUKU R（2） KONDO O（2）
WANG H（2） YAMAGUCHI J（2）
公开年 2022（14） 2021（13）
申请年 2021（28）
专利权人 FUJITSU LTD（6） LINTEC CORP（3） TOKYO ELECTR.（3） KYOCERA CORP（2）
MITSUBISHI M.（2） UNIV SINGAPO.（2）

Manufacturing optical device by forming resist of predetermined shape on multilayer graphene, and processing multilayer graphene together with resist, removing resist covering, and providing electrode covering exposed inclined end face of multilayer graphene.

KONDO D, HAYASHI K, ASO H

Graphene element used as field effect transistor having top gate structure, comprises boron nitride layer having turbostratic structure, and graphene layer in contact with boron nitride layer.

KONDO O

Optical element comprises substrate, multilayer graphene provided on substrate, electrode connected to multilayer graphene, and another electrode connected to multilayer graphene.

KONDO O

Producing atomic film comprises physically peeling atomic film from multi-layered atomic film or layered bulk crystal using peeling substrate, and transferring peeled atomic film onto transfer substrate.

HAYASHI K

Graphene nanoribbon used as channel for electronic device e.g. top gate-type field effect transistor and thin film transistor, is fused cyclic compound.

YAMAGUCHI J, HAYASHI H, YAMADA Y

Thermally conductive adhesive composition used in electronic devices, comprises adhesive resin and graphene having two-dimensional structure.

TAKEO Y, ISAO I, YOSHINOBU T, ICHIKAWA I

Transparent electrode for electronic device, has conductive silver-containing layer and conductive oxide layer that are laminated in this order, and transparent electrode that is provided with sulfur-containing silver compound layer.

SHINODA N, NAITO K, SAITA M, KATSUYUKI N, NAOMI S, YUTAKA S, SAITA Y, SHIDA N

Thermal conductive structure comprises thermally conductive metal layer, and structural layer arranged on thermally conductive metal layer, where structural layer is stacked structure formed by graphene layer and ceramic material layer or structural layer is graphene-mixed ceramic material layer.

HUANG H, HUANG C, HE M, HANCHANGHUANG, HE M X, HUANG J K, HUANG H Z, WANG H

Forming film by carrying substrate having recess into processing container, placing on mounting table provided in processing container, using plasma of mixed gas containing inert gas and carbon-containing gas, while applying high frequency bias, and forming graphene film on substrate.

SUGIURA M, MATSUMOTO T

Substrate processing method for processing substrate, involves performing first plasma processing while holding carried-in substrate in first position, and performing second plasma processing in state where substrate support pin is lowered and substrate is held at second position.

WADA M, KABUKI N, IFUKU R, MATSUMOTO T