国家/地区 美国（18） 中国（10） 韩国（10） 世界知识产权组织（10） 日本（6） 台湾（5） 欧洲专利局（EPO）（4） 印度（2）
IPC部 C（19）
IPC大类 C01（19）
IPC小类 C01B（19）
IPC C01B031/04（19）
发明人
公开年 2015（11） 2014（7）
申请年 2014（19）
专利权人

Separating carbon structure including e.g. graphene and carbon nanotube deposited on seed structure, comprises e.g. providing carbon structure into processing chamber, heating carbon structure and seed structure, and supplying etching gas.

MATHARU J, THOMAS S, TEO K B K, JOUVRAY A, JOUBEUREI A, MATARU J, TOMASEU S

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Method for increasing service lifetime of electronic apparatus placed within compartment of vehicle or on exterior of vehicle, involves placing graphene coating layer on environment-facing surface of electronic component of apparatus.

LI A W, HUNT J H, HOWE W R

Forming graphene, useful as e.g. electrical or thermal conductive substrate, comprises placing and heating a substrate within reaction chamber, introducing carbon precursor into chamber, and forming graphene layer on surface of substrate.

LIU X, MANLEY R G, MORENA R M, SONG Z

Method for modifying e.g. I-V characteristics, of graphene i.e. semiconductor film, involves placing graphene film in vacuum environment, and radiating graphene film with electron beam to obtain graphene material.

HUANG C, CHU C, CHIU S, WANG C, WEI C, CHUNG C, WU B, HUANG J, QIU S, WANG J, ZHU J, WEI J, ZHONG C, HUANG C H, CHU C W, CHIU S M, WANG C C, WEI C M, CHUNG C J, WU B H

Preparation method of reduced graphene oxide (RGO) film, involves reducing graphene oxide thin film using chemical reduction method and pressure-assisted thermal reduction method, respectively, to form reduced graphene oxide film.

KIM S H, JANG J, SHIN K, SHIN K H

Copper-based contact material used in low-voltage circuit breaker, contactor and relay, comprises graphene-enhanced copper foam including graphene and copper, where copper foam comprises oxide powder, carbide powder and copper powder.

LIN W, LIU L, WENG W

Manufacture of graphene film used for e.g. semiconductor, involves arranging substrate, providing metallic catalytic material and reducing gas, raising temperature, providing carbon-containing gas, and generating carbon atoms.

YEN W, CHUEH Y, YEN W C, CHUEH Y L

Manufacturing method of graphene film used in e.g. electronic device, photo-electronic device involves growing nano graphenes on insulating substrate by pyrolyzing carbon source included in reactive gas, without using metal catalyst.

SONG Y W, PARK J H

Synthesizing reduced graphene oxide on a substrate from seedlac, comprises preparing the seedlac solution in alcohol having specified carbons, dipping the substrate into the solution, and heating the substrate which is a metallic sheet.

SHYAM K C, MANISH K B, TAPAN K R, SUMITESH D, RANJAN K S, YASHABANTA N S, ASHIT K P, VIKAS C S, CHOUDHARY S K, BHADU M K, ROUT T K, DAS S, SAHU R K, SINGHBABU Y N, PRAMANICK A K, SRIVASTAVA V C