国家/地区 美国（13） 世界知识产权组织（8） 日本（7） 韩国（7） 中国（6） 欧洲专利局（EPO）（4） 法国（2）
IPC部 B（13）
IPC大类 B82（13）
IPC小类 B82Y（13）
IPC B82Y040/00（13）
发明人
公开年 2012（6） 2013（4） 2011（3）
申请年 2011（13）
专利权人 CENT NAT REC.（2）

Making graphene layers involves forming article that comprises carbon-containing self-assembled monolayer; depositing layer of nickel on monolayer; heating article in reducing atmosphere; and cooling to convert monolayer to graphene layer.

MALIAKAL A J

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A

Manufacture of graphene thin film for transparent electrode, involves causing deposition plate which contacts with substrate to perform reciprocating linear motion above substrate, and coating graphene oxide solution.

CHANG S T, KO Y U, TAE J S, UN K Y, KO Y

Manufacture of graphene nanomesh used for e.g. manufacturing semiconductor device, involves depositing several particles having carbon absorption property on graphene at predetermined temperature or more, heating and removing particles.

SATO S, IWAI T

Method of forming graphene device, involves patterning protection layer and seed layer to form protection pattern and seed pattern with respective lengths in respective directions.

PARK K

Manufacture of graphene substrate for semiconductor element, involves contacting metal layer and carbon-containing layer, heating to dissolve carbon in carbon-containing layer, and cooling to deposit carbon in metal layer.

HIURA H, TSUKAGOSHI K

Fabrication of graphene structure comprises on fabrication substrate, forming pattern of distinct graphene catalyst materials, and in one graphene synthesis step, forming different numbers of graphene layers on the catalyst materials.

PARK J, NAM S, LIEBER C M

Method of fabricating graphenic material used as electrical conductor for devices e.g. display, involves growing sheet of graphene on planarized metallic substrate.

JOHNSON A T, LUO Z, JOHNSON A

Post-treating method of graphene used for e.g. biosensor, involves forming metal thin film on graphene, disposing liquid phase carrier on graphene, hardening carrier, and separating carrier and graphene from metal thin film.

WON D, CHO S, YOON J, NA D, WON D K, CHO S M, YOON J H, NA D H, YUAN D

Fabricating structure comprising graphene sheet equipped with metal pads, comprises synthesizing graphene sheet on many metal pads that are laid on membrane of dielectric material, and optionally eliminating the membrane.

ZENASNI A, CORAUX J, IVANOVAHRISTOVA V, LANDIS S, PERNEL C