国家/地区 中国（21）
IPC部 C（21）
IPC大类 C23（21）
IPC小类 C23C（21）
IPC C23C014/06（21）
发明人 CHEN Z（3） HAO Y（3） ZHANG J（3）
HUANG J（2） LV J（2） NING J（2）
WANG D（2） WU C（2） WU H（2）
YANG H（2） ZHANG X（2） ZHANG Y（2）
公开年 2022（7） 2016（3） 2021（3） 2015（2）
申请年 2021（4）  2016（3）  2020（3）  2022（3）  2019（2） 
专利权人 UNIV XIDIAN（4）

Growing single crystal III-nitrides on ceramic substrate comprises e.g. depositing filling material on surface of ceramic substrate, grinding and polishing to obtain smooth surface, and/or forming aluminum-oxygen compound layer or two-dimensional material layer on surface.

GUO F, YANG H, CHEN Z, WU J, SHEN B, YANG X

Epitaxial gallium nitride (GaN) with diamond as substrate comprises diamond substrate, single-layer or multi-layer graphene layer arranged on diamond substrate, aluminum nitride layer sputtered on graphene layer, and gallium nitride thin film epitaxially grown on aluminum nitride.

LI X, ZHANG F

Preparing diamond-based gallium nitride epitaxial substrate structure, involves preparing aluminum nitride nucleating layer on diamond substrate, growing graphene layer on surface of copper foil, and transferring onto aluminum nitride nucleation layer.

HAO Y, MA P, WANG D, JIA Y, ZHANG J, WU H, NING J

Light emitting diode transparent electrode useful for mobile phone, comprises first layer electrode and second layer electrode set on epitaxial layer, epitaxial layer includes P/N electrode finger and P/N bonding pad, and first layer electrode includes chromium layer and transparent material layer.

HU J, ZHANG X, LUO G

Low temperature sputtered graphene transparent electrode thin film used in solar cell comprises soda-lime glass substrate plated with molybdenum thin film, photovoltaic copper-zinc-tin-selenium film layer, and p-n junction thin film.

MA J

Growing of nitride on diamond for e.g. consumer electronics, involves preparing group of diamond single crystal substrates, group(s) of diamond polycrystalline polishing substrates and material of gallium nitride/graphene/diamond.

LIANG Z, WANG Q, WANG X

Semiconductor component useful in plasma reaction device and plasma etching process of process gas e.g. carbon tetrafluoride and oxygen, comprises conductive heat conducting material filled in pores of first corrosion resistant coating.

NI T, CHEN X, ZHU S

Preparing graphene by relatively closed area solid-phase process, comprises successively or simultaneously depositing carbon source layer and catalytic metal layer on surface of clean substrate to obtain graphene preparation precursor, and heat annealing in oxygen-free or low-oxygen environment.

DUAN J, DENG L, LV T, WU H, ZHANG W, XIONG W

Carrier substrate for transferring transfer layer from carrier substrate to product substrate, comprises carrier base substrate, protective layer, and transfer layer grown on protective layer.

BURGGRAF J, JUERGEN B

Using deposition system involves loading wafer into processing chamber equipped with RF system, supplying aromatic hydrocarbon precursor into processing chamber, turning on RF power of RF system to decompose aromatic hydrocarbon precursor into active radicals.

WU C, NI I, HSU Y, HUANG J, XU Y, WU Z