国家/地区 美国（61）
IPC部 C（61）
IPC大类 C01（61）
IPC小类 C01B（61）
IPC H01L021/02（61）
发明人 SHIN H（4） BYUN K（3） BYUN K E（3）
LEE C（3） LEE C S（3） LEE E（3）
SHIN K（3） SHIN K W（3） AHN S J（2）
AN S（2） AN X（2） CENTENO P A（2）
CHO S（2） CHO S M（2） CHOE P（2）
公开年 2017（8） 2013（7） 2021（6） 2012（5） 2016（5） 2020（5） 2014（4） 2015（4） 2022（4） 2023（4） 2010（3） 2018（3） 2019（2）
申请年 2016（9）  2013（6）  2015（6）  2022（6）  2012（5）  2019（5）  2021（5）  2011（4）  2009（3）  2017（3）  2018（3）  2020（3）  2014（2） 
专利权人 SAMSUNG ELEC.（10） APPLIED MATE.（3） CALIFORNIA I.（3） TOKYO ELECTR.（3）
UNIV CALIFOR.（3） COMMISSARIAT.（2） GRAPHENEA SA（2） GWANGJU INST.（2）
HANWHA TECHW.（2） HU S C（2） INT BUSINESS.（2） LIN I（2）
SUNG C（2） UNIV SINGAPO.（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）
YU C（2）

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Graphene interconnect structure useful for electronic device comprises first oxide dielectric layer including porous silicon oxide, or amorphous boron nitride, second oxide dielectric layer including aluminum oxide and graphene layer.

KIM C, BYUN K E, SHIN K W, LEE C S, BAEKWON P, PARK B, LEE C, SHIN K, BYUN K

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Processing semiconductor for producing high quality devices and structures, involves delivering carbon-containing precursor and hydrogen-containing precursor to processing region of semiconductor processing chamber, forming layer of graphene on substrate positioned in processing region of chamber.

INGLE N K, MALLICK A B, SINGHA R S, WANG J

Digital formation of two-dimensional materials structures used for electronic components, involves generating donor substrates containing back surface and front surface, applying coating to front surface, and irradiating coating containing donor material.

ZERGIOTI I, PAPAZOGLOU S, ZACHARATOS F, LOGOTHETI A, PESQUERA A, ZURUTUZA A, NAVEH D

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Plasma enhanced chemical vapor deposition method used in semiconductor structure, comprises turning on radio frequency source of radio frequency system to decompose aromatic hydrocarbon precursor into multiple active radicals at specific frequency to form graphene layer on magnetic layer.

WU Z, NI I, XU Y, HUANG J, WU C, HSU Y, HUANG J Z, HSU Y H

Forming graphene on flexible substrate, involves providing polymer substrate including metal structure, carbon source and carrier gas, and subjecting polymer substrate to plasma enhanced chemical vapor deposition process.

TSENG C, LIN C, YEH N, LEU C, LU C

Semiconductor device e.g. monolithic three-dimensional integrated circuit, has microelectronic components embedded in single crystalline dielectric material, where material contains carbon with diamond structure or hexagonal boron nitride.

CLARK R D, CLARK R

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F