国家/地区 世界知识产权组织（95）
IPC部 C（95）
IPC大类 C01（95）
IPC小类 C01B（95）
IPC C01B032/186（95）
发明人 MATSUMOTO T（13） IFUKU R（10） GUINEY I（5）
TAKASHI M（5） THOMAS S（5） WADA M（5）
KABUKI N（4） LIU X（4） RYOTA I（4）
CHIBA G（3） CHIBA Y（3） DIXON S（3）
SUGIURA M（3） ZHANG X（3） BADCOCK T J（2）
公开年 2021（13） 2022（13） 2017（12） 2015（10） 2016（9） 2014（8） 2012（7） 2013（6） 2020（6） 2018（4） 2019（3） 2011（2） 2023（2）
申请年 2013（10）  2014（10）  2016（10）  2020（10）  2021（10）  2015（9）  2022（9）  2019（8）  2012（7）  2017（5）  2011（3）  2010（2）  2018（2） 
专利权人 TOKYO ELECTR.（14） PARAGRAF LTD（5） CORNING INC（4） UNIV CALIFOR.（4）
COMMONWEALTH.（3） HANWHA TECHW.（3） JX NIPPON MI.（3） NIPPON MININ.（3）
NIPPON MININ.（3） SAMSUNG TECH.（3） AIXTRON SE（2） CALIFORNIA I.（2）
CEALTECH AS（2） GUARDIAN GLA.（2） GUARDIAN IND.（2） HEIQ MATERIA.（2）
LAM RES CORP（2） SHANGHAI INS.（2） SNU R DB FO.（2） UNIV EXETER（2）

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Film forming method by loading substrate into processing container, forming graphene film on substrate with plasma of process gas comprising carbon-containing gas, forming doped graphene film on substrate and/or graphene film with plasma of process gas comprising dopant gas.

YAMADA H, IFUKU R, MATSUMOTO T, KABUKI N

Digital formation of two-dimensional materials structures used for electronic components, involves generating donor substrates containing back surface and front surface, applying coating to front surface, and irradiating coating containing donor material.

ZERGIOTI I, PAPAZOGLOU S, ZACHARATOS F, LOGOTHETI A, PESQUERA A, ZURUTUZA A, NAVEH D

Substrate processing includes taking substrate into processing vessel, removing oxygen-containing layer on substrate using plasma of gas mixture including hydrogen-containing gas, and forming nucleation layer and graphene film on substrate using plasma of gas mixture including carbon-containing gas.

IFUKU R, MATSUMOTO T, WADA M, KABUKI N

Forming graphene layer structure, comprises providing growth substrate having growth surface, and forming graphene layer on growth surface by chemical vapor deposition, where growth surface is formed of material e.g. yttrium-stabilized zirconia.

DIXON S, GUINEY I, THOMAS S, GRIFFIN R M, BADCOCK T J

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Processing substrate by loading substrate into processing container, forming carbon film on substrate with plasma of mixed gas containing carbon-containing gas while inside of processing container is maintained at pressure, and changing inside of processing container.

WADA M, IFUKU R, MATSUMOTO T, YAMADA H, TAKASHI M

Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.

UEDA H, WADA M, ZHEN