国家/地区 中国（14） 韩国（8） 美国（8） 日本（2） 台湾（2） 世界知识产权组织（2）
IPC部 C（19） H（9） B（3）
G（2）
IPC大类 C23（19）
IPC小类 C23C（19） H01L（8） C01B（7）
B82Y（2） C25B（2） C30B（2）
G01N（2） H01B（2） H01J（2）
IPC C23C016/50（19）
发明人 LEE C（3） LEE C S（3） LI C（3）
SHIN H（3） SHIN H J（3） ZHANG L（3）
BYUN K（2） BYUN K E（2） LI Y（2）
SHEN X（2） WANG X（2） YE Q（2）
公开年 2021（19）
申请年 2021（10）  2020（9） 
专利权人 SAMSUNG ELEC.（3）

Producing octahedral transition metal dichalcogenides involves forming transition metal layer on substrate and injecting chalcogenide-containing gas onto the substrate together with plasma treatment.

VINIT K, KIM H U, LEE J, SEOK H, KIM T, KIM T S, SEOK H H, WOO K H, CANADEVINIT

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Quartz boat structure for chemical vapor deposition device, comprises quartz boat main body having two ends provided with bearing beam, and two sides of upper end of bearing beam provided with rivet inserted in groove.

YE Q, WANG X, ZHANG L

Preparing ultra-thin radiating fin used in electronic device, and integrated circuit , involves preparing metal radiating sheet with array pattern on surface of metal foil by nanometre stamping template, and depositing vertical graphene film array on surface.

PAN Z, TAN H

Two-dimensional material forming apparatus comprises substrate moving unit, and two-dimensional material forming unit for forming two-dimensional material by spraying carbon gas on substrate moved by substrate moving unit.

SHIN U C

Method for preparing hole transport layer useful in crystal silicon solar cell involves etching Nafion film on surface of graphene mixed film using plasma enhanced chemical vapor deposition and plasma technology, and exposing graphene film.

YU W, LIU L, HUANG Y, JIA L, SHI X, LIU X, LU W, CONG R

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Continuously or semi-continuously producing graphene by introducing particles comprising core into stationary deposition chamber and subjecting to plasma enhanced chemical vapor deposition using carbon-containing gas to form solid graphene.

BEUKES J A, HUANG F

Graphene structure used in electronic device, comprises substrate, and directly grown graphene directly grown on surface of substrate and has controlled surface energy, which has increased surface energy of directly grown graphene.

LEE C, LEE S, SHIN H, BYUN K, SHIN K, SHIN K W, BYUN K E, SHIN H J, LEE S Y, LEE C S

Method for high-quality, rapid, large-area preparation of vertical graphene films, comprises e.g. passing rolled substrate through reaction chamber, turning on plasma, winding of rotating shaft to form vertical graphene and reacting.

WANG Z, LI Y, LIU M, LIU J