国家/地区 美国（39） 世界知识产权组织（31） 中国（26） 韩国（25） 日本（20） 欧洲专利局（EPO）（19） 台湾（11） 印度（6） 加拿大（4） 俄罗斯（4） 英国（3） 墨西哥（3）
IPC部 C（63）
IPC大类 C30（63）
IPC小类 C30B（63）
IPC C30B029/02（63）
发明人 VEERASAMY V S（4） DIXON S（3） GUINEY I（3）
HAO Y（3） NING J（3） VEERASAMY V（3）
WANG D（3） ZHANG J（3） ZHANG L（3）
BERRY V（2） CHAI Z（2） CHEN D（2）
CHEN J（2） CHOI J Y（2） HAN D（2）
公开年 2014（10） 2013（9） 2021（7） 2022（7） 2015（6） 2023（5） 2011（4） 2017（4） 2009（3） 2016（2） 2018（2） 2020（2）
申请年 2013（10）  2021（9）  2012（7）  2014（6）  2009（5）  2016（5）  2020（5）  2022（5）  2011（2）  2015（2）  2017（2） 
专利权人 GUARDIAN IND.（4） GUARDIAN GLA.（3） GUARDIAN IND（3） PARAGRAF LTD（3）
SAMSUNG ELEC.（3） UNIV XIDIAN（3） MAX PLANCK G.（2） NAMIKI SEIMI.（2）
NANOTEK INST.（2） SHANGHAI INS.（2） SUNEDISON SE.（2） UNIV HANYANG.（2）
UNIV HANYANG.（2）

Crucible used for growing two-dimensional semiconductor material, comprises crucible cover comprising cover plate and cover side wall, and crucible base comprising bottom plate and bottom side wall.

ZHANG L

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Electrical connection component for e.g. electric contact, comprises base material and nanocarbon material film composed of graphene laminated material formed by laminating two layers of graphene single layer materials.

KITANO A, SHIMIZU T, KUBO T

Preparing low transmission loss single crystal copper material comprises e.g. forming single crystal copper layer on substrate i.e. graphene layer surface, and peeling off single crystal copper layer from substrate in mixed gas atmosphere of argon and hydrogen.

WANG E, YUE X, HUANG Z, HE M, ZHANG Z, DING Z

Preparing quantum resistance chip based on graphene, involves providing silicon carbide substrate, annealing silicon carbide substrate, performing epitaxial growth on surface of substrate by using chemical vapor deposition method by using silicon ethane as gas catalyst and acetylene.

XIAO X, CHEN L, KONG Z, WANG H

Graphene element used as field effect transistor having top gate structure, comprises boron nitride layer having turbostratic structure, and graphene layer in contact with boron nitride layer.

KONDO O

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.

UEDA H, WADA M, ZHEN