国家/地区 中国（10） 日本（3） 美国（3） 世界知识产权组织（2）
IPC部 C（11） B（3） H（3）
IPC大类 C01（11） C23（5） C30（3）
H01（3） B82（2） C09（2）
IPC小类 C01B（11）
IPC C01B031/04（6） C01B032/186（6） C23C016/26（4）
B82Y040/00（2） C01B032/182（2） C09K005/14（2）
C23C014/06（2） C30B029/02（2）
发明人 WANG H（11）
公开年 2014（3） 2015（2） 2016（2）
申请年 2015（3）  2013（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（11）

Graphene processing device for providing low energy injection ion for use in e.g. biological medicine application, has upper electrode net and the lower electrode net through which plasma generated by plasma coil discharge passes so as to process sample located on sample seat in processing chamber.

WANG W, JIANG C, WANG Y, WANG H

Preparation of hexagonal boron nitride surface torsion double-graphite alkene involves introducing reaction gas and catalytic gas into chemical vapor growth chamber at second preset temperature.

WANG W, XIAO X, JIANG C, WANG H

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Transferring graphene to target substrate used to obtain multilayer graphene, involves depositing graphene on first substrate, covering graphene with buffer layer and adhering heat release adhesive tape on buffer layer.

CHEN J, WU T, WANG H, XIE X

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Method for preparing graphene-boron nitride hetero-junction, involves heating and removing heat release adhesive tape to obtain graphene-boron nitride hetero-junction.

CHEN J, LU G, WU T, ZHANG X, WANG H

Preparing graphene nano belt used for preparing electronic devices, involves carrying out metal catalyzed etching method to obtain nano strip shaped groove structure set with hexagonal boron nitride groove module.

HE L, JIANG M, LI L, XIE X, TANG S, ZHANG D, XIE H, WANG H, CHEN L

Manufacture of graphene flash memory involves patterning conductive layer formed on semiconductor substrate, forming source/drain electrodes, dielectric layers, graphene layer and gate electrode, and etching dielectric layers.

WANG H, JIANG M, LI L, XIE X, WU T, CHEN J, LU G, XIE H, ZHANG X

Preparation of graphene-based chip cooling material by reacting substrate, heating, plasma treating, depositing graphene, forming, cooling and transferring.

LIU J, XIE X, WANG L, ZHANG Y, WANG H

Manufacture of vertical-graphene heat-radiating material involves performing plasma pretreatment of growth substrate, carrying out plasma enhanced chemical vapor deposition on growth substrate, and transferring vertical-graphene.

WANG H, XIE X, WANG L, ZHANG Y, LIU J