国家/地区 中国（15） 世界知识产权组织（7） 美国（6） 日本（4）
IPC部 C（16） B（7） G（2）
H（2）
IPC大类 C01（16）
IPC小类 C01B（16）
IPC C23C016/26（9） C01B031/04（8） B82Y040/00（5）
C01B032/186（5） B82Y030/00（4） C23C016/02（4）
C23C014/06（3） C01B031/02（2） C01B032/182（2）
C01B032/184（2） C23C014/48（2） C23C016/50（2）
C23C016/56（2） C30B029/02（2）
发明人 XIE X（9） DING G（7） JIANG M（6）
TANG S（5） WANG H（5） DI Z（4）
CHEN Z（3） XIE H（3） YU G（3）
ZHANG Y（3） CHEN L（2） GONG Q（2）
HE L（2） LI X（2） SUI Y（2）
公开年 2012（5） 2015（3） 2017（3）
申请年 2012（3）  2015（3）  2011（2）  2016（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（16）

Graphene processing device for providing low energy injection ion for use in e.g. biological medicine application, has upper electrode net and the lower electrode net through which plasma generated by plasma coil discharge passes so as to process sample located on sample seat in processing chamber.

WANG W, JIANG C, WANG Y, WANG H

Method for improving multi-layer graphene coverage rate on copper-based alloy substrate comprises annealing copper base alloy substrate, introducing carbon source to graphene growth after annealing, realizing multi-layer graphene, quickly cooling to room temperature, ending growth.

CHEN Z, XIAO R, YU G, ZHANG Y

Growing high-entropy alloy nanoparticles on a flexible substrate involves obtaining a flexible substrate, using laser direct writing technology to grow a three-dimensional graphene film with a preset shape on the flexible substrate.

LI M, LI X, XU P, WANG X

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Manufacture of gas sensor for nitrogen oxide, involves placing microheater platform substrate having graphene-covered surface, to chemical vapor deposition reactor, injecting inert gas, hydrogen and sulfur source gas, reacting and cooling.

LI T, GUO L, LIANG C, WANG Y

Non-adhesion graphene preparing metal foil layer stacking method, involves stacking layers of metal foil, separating metal foil, and utilizing chemical vapor deposition in each surface of metal foil stacked structure to prepare graphene.

ZHANG Y, YU G, SUI Y, CHEN Z, DENG R, GE X, LIANG Y, HU S

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Preparation of nanowire and graphene composite material by providing silicon germanium-on-insulator substrate comprising silicon substrate, oxide layer and silicon germanium layer from bottom to top, and etching silicon germanium layer.

DI Z, XUE Z, ZHANG M, YE L, DAI J, WANG Z

Selection of qualified region of chemical vapor deposited graphene film during fabrication of microelectronics, involves heating chemical vapor deposited graphene film formed on metal substrate using reaction gas, and removing defect.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Preparing graphene nano belt used for preparing electronic devices, involves carrying out metal catalyzed etching method to obtain nano strip shaped groove structure set with hexagonal boron nitride groove module.

HE L, JIANG M, LI L, XIE X, TANG S, ZHANG D, XIE H, WANG H, CHEN L