国家/地区 日本（17）
IPC部 B（17）
IPC大类 B01（17） C01（17） C23（8）
B82（5） H01（5） B05（2）
C30（2）
IPC小类 B01J（17）
IPC B01J023/755（17）
发明人 MATSUMOTO T（4） CHOI J（2） CHOI J Y（2）
HAYASHI K（2） IFUKU R（2） IN Z（2）
SHIN H（2） SHIN H J（2） YOON S（2）
YOON S M（2）
公开年 2014（4） 2013（3） 2009（2） 2012（2） 2016（2） 2022（2）
申请年 2011（3）  2014（3）  2008（2）  2012（2）  2021（2） 
专利权人 SAMSUNG ELEC.（4） TOKYO ELECTR.（4） FUJITSU LTD（2） UNIV MEIJO（2）

Producing multilayer graphene involves recrystallizing catalyst film by performing heat treatment of heating catalyst film containing iron and nickel in atmosphere containing hydrogen, and another atmosphere containing hydrogen and hydrocarbons to form stacked graphenes.

HAYASHI K

Metal catalyst layer used for producing graphene, laminated and crystallized on c-plane of substrate having corundum structure, having face-centered cubic structure.

NARUTSUKA S, NAKAJIMA R

Production of graphene used as wiring material, involves supplying carbon-containing gas and metal catalyst into chamber and reactivating catalyst by supplying process gas and carbon-containing gas to regrow graphene on catalyst surface.

IFUKU R, MATSUMOTO T

Formation of nitrogen-doped porous graphene envelope for metal catalyst involves vaporizing organic precursor and nitrogen precursor, heating substrate particles in reactor, and supplying the precursors using carrier gas to reactor.

KIM H, JANG B, KWON G H, KIM H Y, JANG B Y

Forming method of base film for graphene, involves heating substrate to temperature at which impurities are eliminated as gas, and heating substrate to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R

Preparing graphene, which is used for manufacturing semiconductor circuit, comprises supplying gas including carbon dioxide, methane and water on metal catalyst, and reacting and cooling the resultant.

SON I H, LEE S J

Preparation of porous graphene involves processing biomass-based carbon source with catalyst, obtaining intermediate product and heat-preserving intermediate at predetermined conditions.

ZHU J, LIU Z, ZHOU G, LIU D, LIU X, TANG Y, WANG E, ZHANG J, ZHENG Y

Graphene patterning method for forming graphene of predetermined pattern involves bringing a patterning member in which catalyst metal layer of predetermined pattern is formed into contact with substrate having graphene oxide film.

MATSUMOTO T, KASHIWAGI Y

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K

Manufacture of catalyst metal layer for manufacturing graphene raw material used for transistor, involves forming film of catalyst metal, heating catalyst metal in high-temperature area and reducing temperature of catalyst metal.

NARITSUKA S, MARUYAMA T