国家/地区 美国（25）
IPC部 C（25） H（15） B（9）
G（2）
IPC大类 C01（25） C23（15） H01（15）
C30（4） B01（3） B82（3）
B32（2）
IPC小类 C01B（25）
IPC C01B032/186（25）
发明人 GUINEY I（3） LEE C（3） LEE C S（3）
SHIN H（3） SHIN H J（3） THOMAS S（3）
TYLER M（3） BYUN K（2） BYUN K E（2）
GLASS H（2） KIM C（2） LEE E（2）
NARKEVICIUTE I（2） SHIN K（2） SHIN K W（2）
公开年 2021（25）
申请年 2020（14）  2021（10） 
专利权人 PARAGRAF LTD（3） SAMSUNG ELEC.（3） LAM RES CORP（2）

Production of transition metal dichalcogenide-graphene heterojunction composite involves transferring graphene onto flexible substrate, depositing transition metal layer on substrate, and injecting gas containing plasma-treated sulfur.

KIM H U, SEOK H, LEE J, KIM T, KIM T S, SEOK H H, WOO K H

Transparent electrode for photovoltaic cells, comprises transparent substrate and composite layer including graphene layer and nanoparticles that are embedded in graphene layer and extended through thickness of graphene layer.

ELSAYED K A M, MAAROUF A A

Graphene device for use in e.g. information technology, has insulator layer, metal layer, graphene layer, optional passivation layer, and optional metal adhesive layer that are arranged together.

LINDAMOOD L, BUSCH J

Making calcium oxide from oolitic aragonite involves applying solar energy to heat reactant mixture in vessel, reactant mixture comprises oolitic aragonite and reactant mixture is heated to temperature.

MYERS A, SOONSHIONG P

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Apparatus for manufacturing graphene by using plasma, has gas supply for supplying reducing gas into reaction chamber at height from upper surface of substrate supporter in height direction of reaction chamber.

LEE C, LEE E, SHIN H, BYUN K, KIM S, BYUN K E, SHIN H J, LEE C S

Pellicle film used for preventing dust from adhering to photomask or reticle, comprises layers laminated to each other and/or layers provided with one or more openings.

TAKADA N, SEKI K, KODERA Y, SEKIGAZUNORI, YUTAKA G

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K

Forming fiber for material by positioning sheet of graphene or oxidative analog of graphene on surface, positioning first and second abutment components on first and second sides of sheet, respectively and applying force to induce bending.

SALIM M G, LIU H, JACOBS T D, KIM M A, THIMONS L A

Continuously or semi-continuously producing graphene by introducing particles comprising core into stationary deposition chamber and subjecting to plasma enhanced chemical vapor deposition using carbon-containing gas to form solid graphene.

BEUKES J A, HUANG F