国家/地区 美国（11） 世界知识产权组织（7） 日本（6） 韩国（6） 台湾（6） 中国（5） 英国（4） 德国（2） 欧洲专利局（EPO）（2）
IPC部 C（21）
IPC大类 C01（21） H01（21） C23（10）
C30（4）
IPC小类 C01B（21）
IPC H01L021/02（21）
发明人 DIXON S（3） GUINEY I（3） THOMAS S（3）
WANG J（2）
公开年 2022（10） 2021（9） 2023（2）
申请年 2021（21）
专利权人 PARAGRAF LTD（3） APPLIED MATE.（2） FUJITSU LTD（2） TOKYO ELECTR.（2）
UNIV SINGAPO.（2）

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Controlling stress of amorphous carbon film, comprises depositing first amorphous carbon layer on substrate, and stacking graphene layer on amorphous carbon layer, and depositing second amorphous carbon layer on graphene and carbon layer.

KIM K

Graphene element used as field effect transistor having top gate structure, comprises boron nitride layer having turbostratic structure, and graphene layer in contact with boron nitride layer.

KONDO O

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Producing atomic film comprises physically peeling atomic film from multi-layered atomic film or layered bulk crystal using peeling substrate, and transferring peeled atomic film onto transfer substrate.

HAYASHI K

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Making water-soluble transfer stack by e.g. applying intercalating solution and transfer layer to growth stack, and delaminating water-soluble polymer film together with two-dimensional material layer to obtain delaminated film.

SHIVAYOGIMATH A, BOGGILD P, BOOTH T J

Black phosphorus-two dimensional material complex for electronic device, includes first and second two-dimensional material layers being configured to be coupled to each other by van der Waals force, and black phosphorus sheet in which phosphorus atoms are covalently bonded.

YOON S, LEE C, HWANG H, SHIN H, SEOL M, SUK S H, SHIN H J, HWANGHYUNTAE, LEE C S, YUNE S I, YIN S, LI C, SHEN X

Method for preparing FET e.g. junction FET, involves providing interdigital electrode on graphene nanoribbon composite structure, where electrode covers set of protrusions and is electrically connected to set of graphene nano-ribbons.

ZHANG T, ZHANG L, JIN Y, LI Q, FAN S

Forming graphene on flexible substrate, involves providing polymer substrate including metal structure, carbon source and carrier gas, and subjecting polymer substrate to plasma enhanced chemical vapor deposition process.

TSENG C, LIN C, YEH N, LEU C, LU C