国家/地区 中国（82）
IPC部 C（82）
IPC大类 C01（82） H01（82） B82（29）
C23（28） B32（13） B01（8）
C30（7） B05（6） C25（5）
C08（4） H05（4） C04（3）
B44（2） B81（2） C07（2）
IPC小类 C01B（82）
IPC H01L021/02（82）
发明人 ZHANG Y（8） DENG P（7） GUO H（7）
LEI T（7） ZHANG K（7） ZHANG F（5）
LEE C（4） LEE C S（4） SHIN H（4）
SHIN H J（4） KIM Y（3） LEE E（3）
LI C（3） LIU Z（3） RUHL G（3）
公开年 2012（15） 2017（12） 2015（8） 2016（8） 2021（8） 2013（7） 2014（7） 2022（4） 2010（3） 2020（3） 2018（2） 2019（2） 2023（2）
申请年 2012（12）  2015（12）  2013（11）  2016（10）  2011（5）  2017（5）  2019（5）  2021（5）  2022（5）  2009（3）  2014（3）  2020（3）  2010（2） 
专利权人 SAMSUNG ELEC.（10） UNIV XIDIAN（8） INFINEON TEC.（3） TAIWAN SEMIC.（3）
FUJITSU LTD（2） HANWHA TECHW.（2） JOHNSON A T（2） SHANGHAI INS.（2）
UNIV CALIFOR.（2） UNIV FUZHOU（2） UNIV MANCHES.（2） UNIV PENNSYL.（2）
UNIV SINGAPO.（2） UNIV SUNGKYU.（2）

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Transistor for semiconductor device, has channel layer that comprises graphene layer and hexagonal boron nitride sheets dispersed in graphene layer and arrangement directions of hexagonal boron nitride sheets that are aligned and source/drain region next to gate stack that is obtained.

CHEN Z, CHU Z, CHEN T, CHUU C

Preparation method of surface P-type gallium oxide, involves preparing single-layer polar hydrogen fluoride graphene by surface functional growth, constructing heterojunction interface between gallium oxides/polar fluoride graphene, and obtaining surface-P-type gallium oxide without lattice damage.

HAO Y, ZHANG J, GAO X, LIN Z, SU J, YUAN H, CHANG J

Plasma enhanced chemical vapor deposition method used in semiconductor structure, comprises turning on radio frequency source of radio frequency system to decompose aromatic hydrocarbon precursor into multiple active radicals at specific frequency to form graphene layer on magnetic layer.

WU Z, NI I, XU Y, HUANG J, WU C, HSU Y, HUANG J Z, HSU Y H

Black phosphorus-two dimensional material complex for electronic device, includes first and second two-dimensional material layers being configured to be coupled to each other by van der Waals force, and black phosphorus sheet in which phosphorus atoms are covalently bonded.

YOON S, LEE C, HWANG H, SHIN H, SEOL M, SUK S H, SHIN H J, HWANGHYUNTAE, LEE C S, YUNE S I, YIN S, LI C, SHEN X

Preparation of ordered chiral molecular chain on substrate used as device substrate, involves heating single crystal substrate, forming double-layer graphene on substrate, placing substrate in chamber, thermally-evaporating 2,2'-diphenylethynyl-4,4'-dibromobiphenyl molecule and depositing molecules.

PI X, WANG H, LU H

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Growing nitride comprises preparing substrate, manufacturing graphene buffer layer on substrate, patterning graphene buffer layer to obtain patterned graphene buffer layer, and growing nitride on patterned graphene buffer layer.

LIU Z, FENG T, LIANG M, YI X, WANG J, LI J