国家/地区 中国（27） 美国（2） 世界知识产权组织（2）
IPC部 C（27）
IPC大类 C01（27） H01（10） C30（6）
B82（4） C23（3）
IPC小类 C01B（27）
IPC C01B031/04（24） H01L021/02（7） B82Y040/00（4）
C30B029/02（4） C01B031/02（3） C23C016/26（3）
C23C016/02（2） C23C016/56（2） C30B025/18（2）
H01L021/205（2） H01L021/324（2）
发明人 GUO H（27）
公开年 2012（23） 2013（4）
申请年 2012（27）
专利权人 UNIV XIDIAN（26） DENG P（2） GUO H（2） LEI T（2）
ZHANG K（2） ZHANG Y（2）

Preparing graphene film comprises cutting silicon substrate and then cleaning, putting the cleaned substrate into chemical vapor deposition system reaction chamber, and growing carbon layer on the substrate.

LEI T, GUO H, ZHANG Y, ZHAO Y, ZHANG K, TANG X

Preparation of silicon-substrate patterned graphene involves passing argon gas-carrying carbon tetrachloride to quartz tube with to-be-patterned film, depositing nickel film on obtained carbon film, annealing and removing nickel film.

LEI T, GUO H, ZHANG Y, ZHANG K, ZHANG C, ZHAO Y

Preparing patterned graphene material comprises removing pollutant on surface of silicon carbide wafer, cleaning surface of silicon carbide, and coating a photoresist layer on the mask surface of the silicon dioxide layer.

TANG X, GUO H, LEI T, ZHAO Y, ZHANG Y, ZHANG K

Preparation of patterned graphene material by heating patterned substrate, introducing argon and chlorine gas mixture, reacting chlorine with exposed silicon carbide, forming carbon film, electron beam depositing nickel layer, and annealing.

ZHAO Y, LEI T, ZHANG Y, ZHANG K, GUO H, HU Y

Preparing structured graphene, comprises cleaning silicon substrate and vacuumizing, introducing propane into the substrate to carbonize, performing heteroepitaxial growth, and cooling the epitaxial cubic silicon carbide film.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Preparation of structured graphene on silicon carbide substrate useful for preparing microelectronic device, involves cleaning silicon carbide sample sheet, depositing layer of silicon dioxide and nickel film annealing.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Method for preparing structured graphene used for manufacturing microelectronic device, involves depositing silicon dioxide on silicon carbide wafer, forming structured pattern and carbon film, depositing nickel film and annealing.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Preparation of structured graphene by depositing silicon dioxide layer on silicon carbide wafer surface, scribing graphics window, reacting carbon tetrachloride with naked silicon carbide, putting wafer on copper film, and annealing.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Preparation of structured graphene by depositing silicon dioxide layer on silicon carbide surface, etching pattern window, reacting silicon carbide with chlorine, removing silicon dioxide outside window, putting on copper film and annealing.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F