国家/地区 中国（17） 美国（13） 世界知识产权组织（9） 韩国（7） 日本（4） 欧洲专利局（EPO）（2） 台湾（2）
IPC部 C（32）
IPC大类 C01（32）
IPC小类 C01B（32）
IPC C01B032/186（32）
发明人 BYUN K（3） BYUN K E（3） ELSAYED K A M（3）
LEE C（3） LEE C S（3） MAAROUF A A（3）
SHIN K（3） SHIN K W（3） WADA M（3）
ZHANG Y（3） DUAN Y（2） IFUKU R（2）
LI X（2） LI Y（2） LI Z（2）
公开年 2022（20） 2023（12）
申请年 2022（32）
专利权人 SAMSUNG ELEC.（4） TOKYO ELECTR.（3） UNIV IMAM AB.（3） CHINESE ACAD.（2）
CHONGQING GR.（2） JIANGSU JIAN.（2） UNIV ZHEJIAN.（2）

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Semiconductor device comprises interconnection structure comprises seed layer disposed on first conductive layer, seed layer including graphene; and metal migration barrier layer disposed on seed layer, metal migration barrier layer including MXene.

HAN J H, KOO W T, HAN Z, KOO W, TAE K W

Graphene interconnect structure useful for electronic device comprises first oxide dielectric layer including porous silicon oxide, or amorphous boron nitride, second oxide dielectric layer including aluminum oxide and graphene layer.

KIM C, BYUN K E, SHIN K W, LEE C S, BAEKWON P, PARK B, LEE C, SHIN K, BYUN K

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Preparing a sponge nickel-loaded nitrogen and fluorine double-doped vertical graphene useful in e.g. preparing anode and cathode materials for lithium-sulfur batteries, comprises e.g. obtaining Ni(AC)2 aqueous solution, adding N2H4H2O and mixing to obtain reaction solution.

TU J, WANG X, QIU Z, XIA X

Manufacture of wiring used in electronic device, involves growing graphene layer on substrate using plasma of hydrocarbon at specific temperature by plasma enhanced chemical vapor deposition, and doping graphene layer with metal.

LEE C, LEE M, SHIN H, BYUN K, KIM K, SHIN K, SHIN K W, KIM K B, BYUN K E, SHIN H J, HYUN L, LEE C S

Depositing graphene barrier film, involves placing substrate containing the titanium thin film layer into substrate processing system chamber forming processing space, supplying first reaction gas into chamber, supplying second reaction gas, and forming graphene layer on titanium thin film layer.

PARK J, LI J, JIN D, SUN W, KIM T, YIN Y, TIAN Z, BAK H, PARK J H, LEE K J, KIM D W, SUN W H, KIM T S, YOON W J, JEON J H, PARK H K, PARK H, JEONJINHO, YUN W J, WOO K D, LEE K

Preparation method of graphene-based composite material involves using mixed gas of argon gas and hydrogen as carrier gas, and obtaining graphene-based composite material by chemical vapor deposition, where graphene material grows parallel to substrate in composite material.

WEI M, CHEN L, GUO X, ZHAO Y, LI X, ZENG F, TANG S, TANG Z

Transparent electrode for solar cell, comprises transparent substrate and composite layer disposed on transparent substrate, where composite layer comprises graphene layer and set of nanoparticles, where nanoparticles are embedded in graphene layer and extend through thickness of graphene layer.

ELSAYED K A M, MAAROUF A A