国家/地区 美国（10） 台湾（7） 中国（4） 世界知识产权组织（4） 英国（3） 日本（3） 韩国（3）
IPC部 C（17）
IPC大类 C01（17） H01（17） C23（6）
B82（3） C30（3） H05（2）
IPC小类 C01B（17）
IPC H01L021/02（17）
发明人 DIXON S（3） GUINEY I（3） THOMAS S（2）
公开年 2022（17）
申请年 2021（10）  2022（6） 
专利权人 PARAGRAF LTD（3） FUJITSU LTD（2） TAIWAN SEMIC.（2）

Transistor for semiconductor device, has channel layer that comprises graphene layer and hexagonal boron nitride sheets dispersed in graphene layer and arrangement directions of hexagonal boron nitride sheets that are aligned and source/drain region next to gate stack that is obtained.

CHEN Z, CHU Z, CHEN T, CHUU C

Preparation method of surface P-type gallium oxide, involves preparing single-layer polar hydrogen fluoride graphene by surface functional growth, constructing heterojunction interface between gallium oxides/polar fluoride graphene, and obtaining surface-P-type gallium oxide without lattice damage.

HAO Y, ZHANG J, GAO X, LIN Z, SU J, YUAN H, CHANG J

Digital formation of two-dimensional materials structures used for electronic components, involves generating donor substrates containing back surface and front surface, applying coating to front surface, and irradiating coating containing donor material.

ZERGIOTI I, PAPAZOGLOU S, ZACHARATOS F, LOGOTHETI A, PESQUERA A, ZURUTUZA A, NAVEH D

Graphene element used as field effect transistor having top gate structure, comprises boron nitride layer having turbostratic structure, and graphene layer in contact with boron nitride layer.

KONDO O

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Producing atomic film comprises physically peeling atomic film from multi-layered atomic film or layered bulk crystal using peeling substrate, and transferring peeled atomic film onto transfer substrate.

HAYASHI K

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Making water-soluble transfer stack by e.g. applying intercalating solution and transfer layer to growth stack, and delaminating water-soluble polymer film together with two-dimensional material layer to obtain delaminated film.

SHIVAYOGIMATH A, BOGGILD P, BOOTH T J