国家/地区 世界知识产权组织（16）
IPC部 C（16）
IPC大类 C01（16）
IPC小类 C01B（16）
IPC C23C016/50（16）
发明人 MATSUMOTO T（3） DING G（2） HUANG F（2）
JIANG M（2） TANG S（2） XIE X（2）
公开年 2016（4） 2022（3） 2012（2） 2017（2） 2021（2）
申请年 2014（3）  2016（3）  2021（3）  2011（2）  2015（2）  2022（2） 
专利权人 TOKYO ELECTR.（3） APPLIED MATE.（2） SHANGHAI INS.（2）

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Film forming method by loading substrate into processing container, forming graphene film on substrate with plasma of process gas comprising carbon-containing gas, forming doped graphene film on substrate and/or graphene film with plasma of process gas comprising dopant gas.

YAMADA H, IFUKU R, MATSUMOTO T, KABUKI N

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Forming film by carrying substrate having recess into processing container, placing on mounting table provided in processing container, using plasma of mixed gas containing inert gas and carbon-containing gas, while applying high frequency bias, and forming graphene film on substrate.

SUGIURA M, MATSUMOTO T

Continuously or semi-continuously producing graphene by introducing particles comprising core into stationary deposition chamber and subjecting to plasma enhanced chemical vapor deposition using carbon-containing gas to form solid graphene.

BEUKES J A, HUANG F

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Formation of graphene film on substrate e.g. glass, involves depositing graphene on surface of substrate to form graphene crystal layer, depositing graphene oxide layer on layer, and depositing graphene on resulting composite layer.

BI H, HUANG F, LIU X, SONG Z, TANG Y, XIU T

Manufacturing method of coated article with graphene-inclusive thin film, involves mechanically removing graphene on major surface of nickel layer and graphene initially formed at interface of silicon layer and nickel layer.

VEERASAMY V S, VEERASAMY V

Obtaining material deposited on substrate by plasma-assisted chemical vapor deposition used as component of window or touch panel and as component in protection system, involves forming one or more graphene layers.

MUNOZ GOMEZ R, GARCIA HERNANDEZ M D M, GOMEZALEIXANDRE FERNANDEZ C, GOMEZ R, HERNANDEZ M D M, FERNANDEZ C, MUNOZ G R, GARCIA H M D, GOMEZALEIXANDRE F C

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M