国家/地区 美国（16）
IPC部 C（16）
IPC大类 C01（16）
IPC小类 C01B（16）
IPC G03F007/20（11） C01B031/04（7） C01B032/186（6）
G03F001/62（6） B82Y030/00（5） B82Y040/00（5）
C01B031/02（4） C01B032/194（4） G03F001/64（4）
H01L021/027（4） C01B032/184（3） C23C016/26（3）
G03F007/16（3） B01J019/08（2） B32B009/00（2）
发明人 LEE D（2） PARK J（2） SHIN H（2）
SHIN H J（2） SUNG C（2） YANASE M（2）
YANASE Y（2）
公开年 2018（3） 2022（3） 2012（2） 2017（2）
申请年 2016（3）  2022（3）  2013（2）  2017（2） 
专利权人 SAMSUNG ELEC.（4） SHINETSU CHE.（2） SHINETSU CHE.（2） SUNG C（2）

Repairing layers of laminate stack or printed circuit board, comprises providing layered structure, identifying fault location in outer graphene layer, preparing surface of outer graphene layer, and applying localized heat on fault location.

MENTOVICH E, ATIAS B, NAVEH D, LEVI A, SMOLINSKY E Z B

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Pellicle film for pellicle used as dust guard in photolithography during manufacture of e.g. semiconductor device, has main layer made of single crystal silicon, and graphene provided on both sides of main layer.

YANASE Y, YANASE M

Graphene wiring structure for use in semiconductor device, has multilayer graphene formed on insulating film, where average particle diameter of graphene crystals is larger than width of multilayer graphene.

MIYAZAKI H, SAKAI T, NISHIDA Y, YOSHIDA T, YAMAZAKI Y, KATAGIRI M, SAKUMA N, SAKUMA H

Manufacturing graphene film used for manufacturing pellicle involves coating graphene with protective film, removing base material by wet etching with etching liquid and dissolving protective film using solvent having lower surface tension.

YANASE Y, YANASE M, LIANG L

Method of making a pellicle for use in extreme ultraviolet (EUV) lithography system, by depositing graphene layer over first material layer, and depositing amorphous silicon layer over graphene layer.

TU C, CHEN C, YOO C S, CHANG J, TSAI C, LIU P, LEE H, LIN C, LIN Y, TU Z, CHEN J, CAI J, YOU Q, ZHANG Z, LIN Z, LIU B, LI X, YOO C

Method for manufacturing pellicle for lithographic apparatus involves removing first substrate portion to form freestanding membrane from graphene layer, in which freestanding membrane is supported by second substrate portion.

PETER M, ABEGG E A, GIESBERS A J, KLOOTWIJK J H, NASALEVICH M A, VAN DEN EINDEN W T, VAN DER ZANDE W J, VAN ZWOL P, VERMEULEN J P M, VLES D F, VOORTHUIJZEN W, GIESBERS A J M, VAN ZWOL P J, VOORTHUIJZEN W P, VAN DEN EINDEN W T A J, VERMEULEN J P M B

Extreme UV light generation apparatus for generating extreme UV light to realize testing system, has optical unit fixed in chamber, and protection film provided adjacent to optical unit, where protection film includes graphite or graphene.

KIM E, KIM M J, PARK J, LEE D, KIM B

Method of fabricating patterned graphene sheets for apparatus involves fabricating substrate with patterned oxide surface, and applying graphene sheets to patterned oxide surface to form layer of graphene.

WANG K, NAVABISHIRAZI A, YAZDANI M, WANG K L