国家/地区 韩国（40） 美国（40） 中国（11） 日本（8） 欧洲专利局（EPO）（6）
IPC部 C（45） H（33） B（26）
G（2）
IPC大类 C01（45）
IPC小类 C01B（45）
IPC C23C016/26（31） C01B031/02（20） C01B031/04（16）
B82Y040/00（15） C01B032/186（15） B82Y030/00（12）
C23C016/02（11） H01L021/02（10） H01B001/04（8）
B32B009/00（7） C23C016/511（7） C23C016/44（6）
C23C016/56（6） H01L021/285（6） H01L029/16（6）
发明人 SHIN H（20） SHIN H J（19） LEE C（13）
CHOI J（12） LEE C S（12） BYUN K（11）
CHOI J Y（11） LEE E（11） BYUN K E（10）
SHIN K（10） SHIN K W（9） KIM C（7）
LEE J H（7） LEE J（6） WOO Y（6）
公开年 2011（9） 2012（5） 2020（5） 2013（4） 2014（4） 2023（4） 2016（3） 2021（3） 2010（2） 2015（2） 2022（2）
申请年 2010（6）  2011（6）  2012（6）  2013（5）  2021（4）  2022（4）  2016（3）  2020（3）  2009（2）  2015（2）  2019（2） 
专利权人 SAMSUNG ELECTRONICS CO LTD（45）

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Graphene interconnect structure useful for electronic device comprises first oxide dielectric layer including porous silicon oxide, or amorphous boron nitride, second oxide dielectric layer including aluminum oxide and graphene layer.

KIM C, BYUN K E, SHIN K W, LEE C S, BAEKWON P, PARK B, LEE C, SHIN K, BYUN K

Manufacture of wiring used in electronic device, involves growing graphene layer on substrate using plasma of hydrocarbon at specific temperature by plasma enhanced chemical vapor deposition, and doping graphene layer with metal.

LEE C, LEE M, SHIN H, BYUN K, KIM K, SHIN K, SHIN K W, KIM K B, BYUN K E, SHIN H J, HYUN L, LEE C S

Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber, injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed, generating plasma of reaction gas in reaction chamber.

LEE C, JUNG A, SHIN H, SHIN K, SHIN K W, SHIN H J, JUNG A R, LEE C S

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Forming graphene product including nanocrystalline graphene by plasma enhanced chemical vapor deposition process, involves growing nanocrystalline graphene directly on substrate using plasma of reaction gas.

LEE E, LEE S, BYUN K, KIM C, LEE C, SHIN H, SHIN K, SONG H

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Apparatus for manufacturing graphene by using plasma, has gas supply for supplying reducing gas into reaction chamber at height from upper surface of substrate supporter in height direction of reaction chamber.

LEE C, LEE E, SHIN H, BYUN K, KIM S, BYUN K E, SHIN H J, LEE C S

Growing graphene selectively involves forming ion implantation region and ion non-implantation region in substrate by implanting ions locally into substrate and selectively growing graphene in ion implantation region.

LEE E, SHIN H, SHIN K, BYUN K, KIM C, LEE C, LEE C S, BYUN K E, SHIN K W, SHIN H J

Formation of graphene for metal wiring for semiconductor device, involves directly growing graphene on non-catalyst substrate based on injecting reaction gas comprising carbon source having preset ionization energy, into reaction chamber.

SONG H, LEE E, LEE C, KIM C, BYUN K, SHIN K, SHIN H, SONG H J, LEE C S, BYUN K E, SHIN K W, SHIN H J