国家/地区 美国（25） 韩国（17） 中国（16） 世界知识产权组织（16） 日本（10） 台湾（7） 欧洲专利局（EPO）（5） 德国（2）
IPC部 C（41）
IPC大类 C01（41）
IPC小类 C01B（41）
IPC C23C016/50（41）
发明人 LEE C（5） BYUN K（4） KIM C（4）
LEE C S（4） LEE E（4） SHIN H（4）
SHIN K（4） BYUN K E（3） KIM S（3）
LI Y（3） MATSUMOTO T（3） SHIN H J（3）
SONG H（3） DING G（2） HONG B H（2）
公开年 2016（7） 2021（7） 2022（5） 2017（4） 2020（4） 2012（3） 2013（3） 2014（2） 2015（2） 2023（2）
申请年 2021（8）  2016（6）  2014（4）  2015（4）  2020（4）  2022（4）  2011（3）  2012（3）  2017（2）  2019（2） 
专利权人 SAMSUNG ELEC.（5） APPLIED MATE.（3） TOKYO ELECTR.（3） GRAPHENE SQU.（2）
SHANGHAI INS.（2） UNIV SINGAPO.（2）

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Preparing a sponge nickel-loaded nitrogen and fluorine double-doped vertical graphene useful in e.g. preparing anode and cathode materials for lithium-sulfur batteries, comprises e.g. obtaining Ni(AC)2 aqueous solution, adding N2H4H2O and mixing to obtain reaction solution.

TU J, WANG X, QIU Z, XIA X

Film forming method by loading substrate into processing container, forming graphene film on substrate with plasma of process gas comprising carbon-containing gas, forming doped graphene film on substrate and/or graphene film with plasma of process gas comprising dopant gas.

YAMADA H, IFUKU R, MATSUMOTO T, KABUKI N

Device for preparing high-conductivity graphene metal composite material, has gas circuit mechanism for introducing gaseous carbon source and auxiliary gas into sample chamber, plasma auxiliary decomposition chamber and hot-pressure chamber.

SHAO L, LI X, ZHANG Y, LI Z, DUAN Y, SHI H, HUANG D

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Forming film by carrying substrate having recess into processing container, placing on mounting table provided in processing container, using plasma of mixed gas containing inert gas and carbon-containing gas, while applying high frequency bias, and forming graphene film on substrate.

SUGIURA M, MATSUMOTO T

Forming graphene product including nanocrystalline graphene by plasma enhanced chemical vapor deposition process, involves growing nanocrystalline graphene directly on substrate using plasma of reaction gas.

LEE E, LEE S, BYUN K, KIM C, LEE C, SHIN H, SHIN K, SONG H

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Two-dimensional material forming apparatus comprises substrate moving unit, and two-dimensional material forming unit for forming two-dimensional material by spraying carbon gas on substrate moved by substrate moving unit.

SHIN U C

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A