国家/地区 美国（21）
IPC部 C（21）
IPC大类 C01（21） H01（21） C23（8）
B32（7） B01（4） B82（4）
B81（2） C30（2）
IPC小类 C01B（21）
IPC H01L021/02（21）
发明人 MIHASHI F（4） MITSUHASHI F（4） TATENO Y（4）
UENO M（4） FUKIDOME H（3） OKADA M（3）
SUEMITSU M（3） CHO S（2） CHO S M（2）
PARK C（2） PARK C H（2） SEO S（2）
SEO S A（2） SHIN S（2） SHIN S M（2）
公开年 2017（21）
申请年 2016（12）  2017（5）  2015（4） 
专利权人 SUMITOMO ELE.（4） UNIV TOHOKU（3） GRAPHENEA SA（2） HANWHA TECHW.（2）

Method for transferring graphene from surface of substrate to other substrate, involves affixing growth substrate onto surface of transitory substrate, delaminating graphene layer from substrate, and transferring layer onto target surface.

LERNER M, PAN D, GOLDSMITH B, AFSAHI S J

Manufacture of porous graphene layer used for e.g. textile industries, involves carrying out chemical vapor deposition of carbon source on catalytically active substrate which catalyzes graphene formation, and forming graphene.

PARK H G, HEIGHT M, CHOI K, PARK H

Stacked body for use in electronic device, has exposed surface which is being main surface opposite to substrate, and regions each including graphene layers and having circumcircle with predetermined diameter range.

OKADA M, MITSUHASHI F, UENO M, TATENO Y, SUEMITSU M, FUKIDOME H, MIHASHI F

Stacked body used in electronic device such as transistor ,has graphene film arranged on first main surface and having atomic arrangement oriented in relation to atomic arrangement of silicon carbide forming substrate.

OKADA M, MITSUHASHI F, TATENO Y, UENO M, SUEMITSU M, FUKIDOME H, MIHASHI F

Substrate for electronic device, such as a field-effect transistor, includes graphene film having atomic arrangement oriented in relation to atomic arrangement of material forming the surface layer region of support substrate.

OKADA M, MITSUHASHI F, TATENO Y, UENO M, MIHASHI F

Graphene deposition process for deposition of graphene on substrates, involves generating radio frequency plasma at location proximate to substrate, while flowing precursor gas containing carbon through plasma and over substrate.

CHEN Z, CHUGH S, MEHTA R

Graphene wiring structure comprises multilayered graphene having laminated multiple planar polycrystal graphene sheets, and metal oxyhalide and metal halide which exist in the interlayer of planar polycrystal graphene sheets.

MIYAZAKI H, SAKAI T, KATAGIRI M, YAMAZAKI Y

Graphene-based laminate used in e.g. organic light emitting device, transistors, comprises substrate, graphene layer on substrate, and inorganic layer comprising fluorine-containing lithium compound, formed on graphene layer.

PARK C, CHO S, SEO S, SHIN S, PARK C H, CHO S M, SEO S A, SHIN S M

Preparing graphene-based thin-film laminate used in e.g. transistor, comprises conducting cycle having e.g. contacting surface of graphene onto substrate with non-metal precursor gas and activating surface of graphene with plasma N times.

PARK C, CHO S, SEO S, SHIN S, KIM T, KIM S, PIAO Z, SEO S A, SHEN Z, PARK C H, CHO S M, SHIN S M, KIM T K, KIM S Y

Production of layered structure involves depositing catalyst structure onto substrate top surface containing non-electroconductive material, depositing graphene structure onto catalyst structure, and partially removing catalyst structure.

LUTZ T, PURKL F, ROELVER R, ROHLFING F