国家/地区 中国（21）
IPC部 C（21）
IPC大类 C01（21）
IPC小类 C01B（21）
IPC G03F007/20（12） C01B032/194（10） C01B031/04（8）
B82Y040/00（7） C01B032/186（6） G03F001/62（6）
C01B031/02（5） C01B032/184（4） G03F001/64（4）
H01L021/027（4） B82Y030/00（3） C23C016/26（3）
G03F007/00（3） B01D067/00（2） B32B009/00（2）
发明人 SUNG C（3） JIANG K（2） LEE E（2）
LI Y（2） LIN Y（2） SONG J（2）
YANASE M（2） YANASE Y（2） YOON J（2）
ZHANG Z（2）
公开年 2013（4） 2016（3） 2022（3） 2017（2） 2018（2） 2020（2）
申请年 2016（4）  2012（3）  2013（2）  2017（2）  2021（2）  2022（2） 
专利权人 SUNG C（3） SHINETSU CHE.（2） SHINETSU CHE.（2）

Method for preparing graphene sub-nanoscale gap by feedback control electric breakdown, involves stopping voltage to apply to two ends of single-layer graphene nanoribbon when resistance of single-layer graphene nanoribbon reaches preset resistance to construct and obtain graphene sub-nanoscale gap.

SU M, HONG W, LIU J, ZHANG C, YUAN Z

Photoetching of erasable graphene involves photoetching oxidation graphene by laser processing, graphene, and performing oxygen plasma treatment to oxidized graphene after laser treatment.

GU M, ZHANG Q, CHEN X, LUAN H, WAN Z

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Method for preparing micro-nano composite of graphene quantum dot array, involves removing mask glue, annealing to remove residual glue, and etching to remove surface sacrificial layer to obtain final graphene array structure.

ZHAO Q, YANG Z, CHEN R, PENG F, YAN Z, CHANG Z, HUANG X

Pellicle film used for preventing dust from adhering to photomask or reticle, comprises layers laminated to each other and/or layers provided with one or more openings.

TAKADA N, SEKI K, KODERA Y, SEKIGAZUNORI, YUTAKA G

Processing the double-sided doping of single-layer graphene comprises e.g. using methane, hydrogen, and argon as gas sources in catalytic metals in a low-pressure CVD system growth of single-layer graphene film on the substrate.

LI D, CHEN Y, SUN X, JIA Y, JIANG K, SHI Z, ZANG X

Pellicle film for pellicle used as dust guard in photolithography during manufacture of e.g. semiconductor device, has main layer made of single crystal silicon, and graphene provided on both sides of main layer.

YANASE Y, YANASE M

Manufacturing graphene film used for manufacturing pellicle involves coating graphene with protective film, removing base material by wet etching with etching liquid and dissolving protective film using solvent having lower surface tension.

YANASE Y, YANASE M, LIANG L

Method of making a pellicle for use in extreme ultraviolet (EUV) lithography system, by depositing graphene layer over first material layer, and depositing amorphous silicon layer over graphene layer.

TU C, CHEN C, YOO C S, CHANG J, TSAI C, LIU P, LEE H, LIN C, LIN Y, TU Z, CHEN J, CAI J, YOU Q, ZHANG Z, LIN Z, LIU B, LI X, YOO C

Manufacture of photoresist-graphene composite material for e.g. micro-sensor, involves exposing mixture comprising graphene material and photoresist using mask pattern, and treating with developing solution to remove uncrosslinked portions.

ZOU Y, XUE B