国家/地区 德国（11）
IPC部 C（11） H（11） B（6）
IPC大类 C01（11） H01（11） B82（5）
C23（3） B32（2）
IPC小类 C01B（11）
IPC H01L029/16（11）
发明人 RUHL G（4） GUINEY I（3） THOMAS S（3）
RUHR G（2） SCHULZE H（2） TAYLOR M（2）
TYLER M（2） WALLIS R（2）
公开年 2021（3） 2016（2） 2017（2）
申请年 2015（3）  2016（2）  2020（2） 
专利权人 INFINEON TEC.（4） PARAGRAF LTD（4）

Forming graphene on silicon substrate for electronic device, comprises providing silicon wafer having growth surface free of native oxides in reaction chamber, and nitriding growth surface with nitrogen-containing gas with wafer.

DIXON S, GUINEY I, THOMAS S, THOMAS S C S

Formation of diode for electronic application, involves providing graphene layer structures on substrates, treating structures with oxidant to form graphene oxide surface, and aligning structure against graphene oxide surface of structure.

WALLIS R, WALLACE R

Electrical generator for generating electricity from sea water, comprises graphene sheet/s comprising electrical contacts and having surface extending between electrical contacts arranged to contact flow of ion-containing fluid.

GUINEY I, TYLER M, THOMAS S, TAYLOR M

Producing polymer-coated graphene layer structure involves e.g. adding substrate to reaction chamber, supplying flow comprising precursor compound to form graphene layer structure, heating and spin-coating using polymer or polymer precursor.

GLASS H, GUINEY I, TYLER M, WALLIS R, THOMAS S, TAYLOR M

Semiconductor device comprises transistor doping region of vertical transistor structure, graphene layer portion adjacent to portion of transistor doping region and transistor wiring structure adjacent to graphene layer portion.

SCHULZE H, RUPP R, RUHL G

Production of layered structure involves depositing catalyst structure onto substrate top surface containing non-electroconductive material, depositing graphene structure onto catalyst structure, and partially removing catalyst structure.

LUTZ T, PURKL F, ROELVER R, ROHLFING F

Method for transferring graphene elements onto substrate, involves introducing graphene element onto liquid film, and reducing distance between substrate and graphene element until graphene elements are set on placeholders of substrate.

KIREEV D, SARIK D, WOLFRUM B, OFFENHAEUSSER A, OFFENHAUSSER A

Forming graphene structure, comprises forming body with protrusion and forming graphene layer at protrusion outer peripheral surface, or forming cylindrical opening in body and forming graphene layer at inner peripheral surface of opening.

IRSIGLER P, RUHL G, SCHULZE H, SHULZ H, RUHR G, ILSGLLE P

Method for processing substrate used in manufacture of e.g. electronic devices, involves forming graphene layer from specific layer on surface of carrier by temperature treatment.

PRUEGL K, RUHL G, RUHR G, PRUGER K

Electrical device e.g. photodetector, has multi-layer graphene structure for laterally contacting single-layer graphene part, and graphite part in contact with surface of multi-layer graphene structure.

RUHL G, FOERG R