国家/地区 日本（12）
IPC部 C（12）
IPC大类 C01（12） C23（12） B82（6）
H01（5） B01（3） B05（3）
C03（2）
IPC小类 C01B（12）
IPC C23C016/26（12）
发明人 CHUNG H（2） CHUNG H J（2） FUJII K（2）
HEO J（2） HEO J S（2） HUH J（2）
HUH J S（2） JUNG H（2） JUNG H J（2）
KANG S（2） KANG S R（2） SEO D（2）
SEO S（2） SEO S A（2） WOO Y（2）
公开年 2011（8） 2012（3）
申请年 2010（12）
专利权人 FUJI ELECTRI.（2） SAMSUNG ELEC.（2）

Manufacture of graphene involves forming graphene into film on magnesium oxide.

FUJII K, SATO M

Forming recrystallized metal layer for growing graphene monolayer involves forming metal layer on substrate; forming layer of dielectric material on the metal layer; and directionally recrystallizing the metal layer.

YAGER T A

Formation of transparent conductive film for, e.g. solar cells, involves guiding camphor vapors on heated substrate, thermally decomposing vapors and forming graphene sheet, peeling sheet by etching, and affixing peeled sheet on target.

KALITA G, UMENO M, WAKITA K

Formation of graphene used for semiconductor device, solar cell and flat panel display device, involves introducing carbon-type gas to surface vicinity of base material and heat processing surface of base material.

NAKASHIMA S, KATO S, UEHARA T, NAKANISHI K, MATSUMOTO M, FUKIDOME H, SUEMITSU M

Manufacture of graphene film for photoelectron engineering device, involves preparing monocrystal substrate, providing monocrystalline catalyst layer, processing, heating gaseous carbon source and cooling.

FUJITA D, XU M S, JO A

Manufacture of graphene film involves supplying carbon containing gas to substrate which installed seed graphene crystal and forming graphene film on substrate by chemical vapor deposition process.

FUJII K, SHIMIZU A

Method of transferring larger-sized graphene used in electric circuit, involves removing adhesive and protection layers from graphene layer respectively.

BAE S, CHUNG H, HEO J, JUNG M, KANG S, SEO D, SEO S, WOO Y, BAE S K, CHUNG H J, HEO J S, JUNG M H, KANG S R, SEO S A, WOO Y S, JUNG H J, HUH J S, YEO R, HUH J, JUNG H

Fabricating graphene to fabricate FET, comprises forming alloy catalyst layer on substrate using sputtering method and/or evaporation method, and forming graphene layer on alloy catalyst layer by supplying hydrocarbon gas onto substrate.

WOO Y, SEO D, SEO S, CHUNG H, KANG S, HEO J, SEO S A, CHUNG H J, KANG S R, HEO J S, WOO Y S, JUNG H J, HUH J S, YEO R, XU D, HUH J, JUNG H

Graphene film for composite complex contains several graphene domains each having specified area.

AGO HIROKI, ITO YOSHITO, TANAKA IZUMI, MIZUNO SEIGI, TSUJI MASAHARU, AGO H, ITO Y, TANAKA I, MIZUNO S, TSUJI M, MIZUNO K

Substrate for fabrication of semiconductor element, has graphene layer formed by chemical vapor deposition using metal catalyst, compound or alloying layer and oxide layer for diffusing metal catalyst sequentially formed on metal layer.

HIURA H, TSUKAGOSHI K