国家/地区 中国（11）
IPC部 C（11）
IPC大类 C30（11） H01（2）
IPC小类 C30B（11）
IPC C30B029/02（6） C30B025/00（3） C30B025/02（2）
C30B025/18（2） C30B029/06（2） C30B033/10（2）
H01L021/02（2）
发明人 JU Q（2） LI X（2） MA Y（2）
WANG J（2） WANG W（2） ZHANG S（2）
公开年 2019（11）
申请年 2019（11）
专利权人 SHANGHAI INS.（2）

Preparing epitaxial growth of metal organic framework surface by matching two-dimensional material templates with lattice symmetry involves using e.g. graphene single crystal, graphene thin film, graphene nanosheets, methane, and hydrogen.

SUN Z, HU A

Sapphire with wider dielectric constant adjusting range is obtained from aluminum oxide and graphene.

CHENG G, LU T, QI J, HUANG X, WEI N, SHI Y

Preparation of single crystal graphene for semiconductor material, involves annealing copper- and nickel-deposited substrate to obtain alloy substrate sample, oxidizing substrate sample, performing chemical vapor deposition, and cooling.

GAO X, FENG Z, YU C, HE Z, LIU Q, GUO J, ZHOU C

Preparing large-sized high-quality single-layer graphene involves drying frosted glass after washing, and uniformly coating liquid phase substrate on surface, and coating frosted glass with liquid phase substrate.

LU C, YE G, LI L, YU S, ZHAO X

Method for growing large-area single crystal graphene, involves using nozzle corresponding to substrate pattern to carry out fixed point carbon source transportation and passing methane for fixed point nucleation for graphene growth.

LAN F, WANG Z, ZHANG S, DONG Z, HAO J

Preparing silicon/silicon carbide/graphene material involves pretreating single crystal silicon substrate into a substrate holder of a cold wall type laser chemical vapor deposition reactor, and vacuuming.

TU R, HU Z, ZHANG S, ZHANG L

Single crystal silicon texturing additive comprises graphene oxide quantum dot solution comprising graphene quantum dots having specified size, surfactant, alkali metal hydroxide and/or carbonate, and deionized water.

WANG J, JU Q, MA Y, WANG W

Complex texturing additive comprises graphene, graphene oxide, surfactant, metal ion and solvent.

WANG J, JU Q, WANG W, MA Y

Growing large mismatched indium gallium arsenide material involves covering layers of graphene on mismatched substrate, placing in growth chamber of gaseous source molecular beam epitaxy system, introducing arsine and pyrolyzing.

GU Y, WANG H, ZHANG Y, SHAO X, LI X, GONG H

Growth method of multilayer graphene single crystal film by placing copper foil in hydrogen atmosphere, heating and annealing, keeping constant temperature in copper foil, and filling mixed gas of hydrogen gas, methane and argon gas.

LI X, SHEN C, QING F