国家/地区 中国（20） 世界知识产权组织（6） 美国（4） 韩国（3） 英国（2） 印度（2） 日本（2）
IPC部 C（35） H（35） B（5）
IPC大类 C30（35）
IPC小类 C30B（35）
IPC H01L021/02（16） C30B025/18（14） C30B029/40（12）
C30B029/02（9） C01B032/186（5） C23C016/02（4）
C30B023/02（4） C30B029/16（4） B82Y040/00（3）
C01B032/194（3） C23C016/26（3） C30B025/10（3）
C30B025/12（3） C30B025/16（3） C30B025/20（3）
发明人 WANG Y（3） DING T（2） DIXON S（2）
FENG H（2） GUINEY I（2） LI P（2）
LIU J（2） MITSURU M（2） NORIYUKI M（2）
PAN Y（2） SHEN J（2） TAKAYASU O（2）
TAKUJI M（2） TANG J（2） THOMAS S（2）
公开年 2022（16） 2021（14） 2023（5）
申请年 2021（35）
专利权人 CEC COMPOUND.（2） CHINESE ACAD.（2） HC SEMITEK Z.（2） PARAGRAF LTD（2）
ROHM CO LTD（2）

Depositing gate dielectric on two-dimensional material involves depositing seed layer over atomically smooth surface of two dimensional material, evaporating predefined thickness of seed layer from atomically smooth surface, and performing atomic layer deposition.

SHRIVASTAVA M, KHANEJA M, MEERSHA A

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Visible-near infrared wide spectrum photoelectric detector is independent device and/or integrated in circuit, and contains flexible substrate, transparent conductive electrode, active layer, p-type ohmic contact layer, upper electrode layer, and silicon nitride passivation layer.

CHEN H, WANG W, DENG Z, LI X, JIA H

Electrical connection component for e.g. electric contact, comprises base material and nanocarbon material film composed of graphene laminated material formed by laminating two layers of graphene single layer materials.

KITANO A, SHIMIZU T, KUBO T

Strain measurement sensor used for wearable device to measure biosignal or movement, comprises base layer formed of flexible material, and conductive thin film layer provided on surface of base layer and formed with cracks having at least one pattern of irregular straight lines or irregular curves.

KIM H J, RYU C H, KIM H, RYU C

Graphene element used as field effect transistor having top gate structure, comprises boron nitride layer having turbostratic structure, and graphene layer in contact with boron nitride layer.

KONDO O

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

P-type transparent conductor with highly reduced graphene oxide thin film, has substrate and highly reduced graphene oxide thin film deposited on the substrate, in which the film is directly grown on substrate by pulsed laser deposition.

RAO R M S, JUVAID M M, SARKAR S, VENKATESAN T

Substrate used for semiconductor module applications e.g. diode modules, comprises silicon carbide single crystal substrate, graphene layer, silicon carbide epitaxial growth layer, and polycrystalline layer, in order.

MAKOTO T, TAKUJI M, MITSURU M, NORIYUKI M, TAKAYASU O

Substrate for forming semiconductor device, comprises graphene layer arranged on silicon surface of silicon carbide crystal substrate, epitaxial growth layer, and graphene layer arranged on silicon surface of epitaxial growth layer.

NORIYUKI M, TAKUJI M, MITSURU M, TAKAYASU O