国家/地区 中国（44）
IPC部 C（44）
IPC大类 C30（44） C23（14） C01（11）
B82（2） H01（2）
IPC小类 C30B（44）
IPC C30B025/00（44）
发明人 LI Y（4） WANG Z（4） XU X（4）
ZHANG J（4） ZHANG Z（4） HAO Y（3）
LIN L（3） LIU K（3） LIU Z（3）
SUN L（3） WANG E（3） YU D（3）
ZHANG L（3） ZHANG S（3） BI H（2）
公开年 2013（6） 2022（6） 2021（5） 2015（4） 2014（3） 2016（3） 2017（3） 2018（3） 2019（3） 2011（2） 2012（2） 2020（2）
申请年 2013（8）  2022（6）  2021（5）  2016（4）  2011（3）  2012（3）  2017（3）  2019（3）  2014（2）  2015（2）  2018（2）  2020（2） 
专利权人 UNIV PEKING（6） SHANGHAI INS.（4） CHINESE ACAD.（2） HARBIN INST .（2）
INST METAL R.（2） UNIV CHINA E.（2） UNIV XIDIAN（2） WUXI GEFEI E.（2）

Preparing graphene crystal using plasma enhanced chemical vapor deposition device involves placing insulating substrate in synthesis chamber, pumping synthesis chamber to vacuum, introducing growth gas, generating plasma and transversely growing graphene small crystal nucleus on insulating substrate.

MA S, LIU B

Transferring two-dimensional material by using higher fatty alcohol or higher fatty acid, comprises e.g. spin-coating to obtain higher fatty alcohol or fatty acid/two-dimensional material/substrate complex and obtaining higher aliphatic alcohol or fatty acid/two-dimensional material complex.

CHENG H, XU C, ZHOU T, REN W

Phased array antenna useful for producing MPCVD single diamond, comprises molybdenum support provided with the driving mechanism for driving the circular plate and the temperature insulation plate provided with the cooling mechanism for cooling outside the reaction preparation tank.

HU F, ZHANG J

Preparing growth graphene of doped germanium single crystal involves using horizontal gradient condensation method to synthesize germanium, cutting polycrystalline germanium, cutting polycrystalline germanium, crucible, quartz tube, quartz cap for cleaning, then processing dry, putting seed crystal.

LI Z

Preparing single crystal graphite comprises e.g. placing metal foil in plasma device, introducing nitrogen-containing gas, starting plasma excitation source for plasma treatment, placing metal foil in reaction furnace, annealing, starting growth of graphene single crystal at growth temperature.

ZHAO M, LI G, WANG B, WEI W, XU X, GUO Y, LI J, JIAN X, QUE L, ZHOU Z

Tantalum carbide-coated carbon material for e.g., LED manufacturing equipment, comprises a carbon substrate, and a tantalum carbide coating layer formed on the carbon substrate.

JO D W, CAO D, WAN J, CHO D W

Synchronous doping method in chemical vapor deposition graphene growth process involves doping trace elements on surface of copper foil, carrying out annealing to form substrate, transferring substrate into furnace, adding reaction gas to enable carbon, gradually depositing and growing on substrate.

ZHANG L, YANG G, ZHENG Y, LUO G, TU R, ZHANGCHI T

Preparing two-dimensional compound semiconductor thin film useful in micro-nano electronic device, comprises placing insulating substrate with single-layer two-dimensional layered material/metal oxide film vertical heterostructure on surface in heating device, and introducing carrier gas.

SHI Z, ZHANG C, ZHU H, WU T, GAO B

Preparing single crystal graphene, comprises preparing single crystal graphene by chemical vapor deposition process, forming graphene nucleus on the substrate, and forming single crystal graphene on basis of graphene core.

WANG Y, LI Y, SUN L, LIU H, LIU Z

Growing single-layer single-crystal graphene based on copper (I) oxide dielectric layer, comprises polishing and cleaning the copper foil, introducing methane, heating and naturally cooling.

ZHAO X, LI Y, WANG P, SUN L, GUO X, ZHANG X, YU F