国家/地区 中国（15）
IPC部 C（15）
IPC大类 C30（15）
IPC小类 C30B（15）
IPC C30B029/02（8） C30B025/00（3） C30B025/18（3）
C30B029/06（3） C23C014/06（2） C30B025/02（2）
C30B029/40（2） C30B033/10（2） H01L021/02（2）
发明人 WANG W（3） JU Q（2） LI X（2）
MA Y（2） WANG J（2） ZHANG S（2）
公开年 2019（11） 2020（4）
申请年 2019（15）
专利权人 SHANGHAI INS.（2） UNIV PEKING（2）

Composite seed crystal useful for aluminum nitride single crystal growth comprises aluminum nitride ceramic substrate, graphene thin layer on aluminum nitride ceramic substrate and aluminum nitride thin film on graphene thin layer.

GUO L, HU W, WANG W, CHEN X

Growing single-crystal graphene using single crystal copper foil with any index surface, by preparing single crystal copper foil, selecting single crystal copper foil as substrate, and growing crystal graphene on single crystal copper foil.

LIU K, ZHANG Z, YU D, WANG E

Growing of graphene single crystals involves growing graphene on substrate by chemical vapor deposition, and introducing oxidizing gas during growth process.

LIU Z, PENG H, CHEN B, SUN L, LI Y, LIU H, WANG Y, CAI A, DING Q, ZHAO Z

Preparation of easy differentiation polycrystalline silicon wafers involves mixing aluminum alloy powder and silicon carbide, spraying with graphene ethanol dispersion, pickling, refining, degassing, machining and bonding with core plates.

WANG X

Preparing epitaxial growth of metal organic framework surface by matching two-dimensional material templates with lattice symmetry involves using e.g. graphene single crystal, graphene thin film, graphene nanosheets, methane, and hydrogen.

SUN Z, HU A

Sapphire with wider dielectric constant adjusting range is obtained from aluminum oxide and graphene.

CHENG G, LU T, QI J, HUANG X, WEI N, SHI Y

Preparation of single crystal graphene for semiconductor material, involves annealing copper- and nickel-deposited substrate to obtain alloy substrate sample, oxidizing substrate sample, performing chemical vapor deposition, and cooling.

GAO X, FENG Z, YU C, HE Z, LIU Q, GUO J, ZHOU C

Preparing large-sized high-quality single-layer graphene involves drying frosted glass after washing, and uniformly coating liquid phase substrate on surface, and coating frosted glass with liquid phase substrate.

LU C, YE G, LI L, YU S, ZHAO X

Method for growing large-area single crystal graphene, involves using nozzle corresponding to substrate pattern to carry out fixed point carbon source transportation and passing methane for fixed point nucleation for graphene growth.

LAN F, WANG Z, ZHANG S, DONG Z, HAO J

Preparing silicon/silicon carbide/graphene material involves pretreating single crystal silicon substrate into a substrate holder of a cold wall type laser chemical vapor deposition reactor, and vacuuming.

TU R, HU Z, ZHANG S, ZHANG L