国家/地区 中国（18）
IPC部 C（18）
IPC大类 C30（18） C23（6） H01（4）
B82（3） C01（3） B22（2）
H05（2）
IPC小类 C30B（18）
IPC C30B029/02（10） C30B025/18（6） C30B029/60（4）
B82Y030/00（3） B82Y040/00（3） C01B031/04（3）
C23C016/26（3） B22F001/00（2） B22F009/24（2）
C23C016/01（2） C23C028/00（2） C30B001/10（2）
C30B025/00（2） C30B029/36（2） C30B029/52（2）
发明人 LI X（3） YU G（3） CHEN Z（2）
LIU Y（2） MA S（2） MA T（2）
PAN G（2） SUN G（2） SUN L（2）
WANG G（2） ZHANG H（2） ZHANG Y（2）
公开年 2014（8） 2015（8） 2016（2）
申请年 2014（18）
专利权人 SHANGHAI INS.（3） UNIV BEIJING.（2） UNIV BEIJING.（2） UNIV SHANDON.（2）

Manufacturing single crystal graphene wire involves using pure single crystal silicon carbide, and then providing obtained single crystal silicon carbide with electron beam bombardment and laser irradiation.

DUAN X

Method for preparation of epitaxial silicon carbide-graphene composite film, involves pre-treating substrate in chemical vapor deposition chamber, growing silicon carbide epitaxial layer, heating, decomposing and recombining structure.

ZHANG B, ZHANG X, ZHANG Z

Flexible metal substrate device for growing graphene thin film, has reflective plate that is located on outer peripheral side of heater for reflecting heat chamber in inward direction.

CHEN Z, HU B, WU H, WU K, XU W, ZHANG H, ZHANG Y, XI M, YU G

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Preparation of highly crystalline graphene/hexagonal boron nitride with stacked structure comprises forming stack structure of graphene/hexagonal boron nitride, and carrying out heat treatment.

SHI D, WANG D, ZHANG G

Selection of qualified region of chemical vapor deposited graphene film during fabrication of microelectronics, involves heating chemical vapor deposited graphene film formed on metal substrate using reaction gas, and removing defect.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Method for growing graphene in sides of silicon carbon surface, involves connecting pneuma source with single crystal growing furnace, and reducing heating temperature of furnace to room temperature.

CHEN X, SUN L, XU X, YANG Z, ZHAO X

Method for preparing liquid copper substrate utilized for preparing large single crystal graphene in field effect transistor device, involves placing solid copper on copper-tungsten alloy substrate, and heating in hydrogen atmosphere.

LIU Y, WU B, WANG L, YU G, CHEN J

Iron-based carbide nanocrystals-graphene nanobelt composite material used in e.g. hydrogen evolution catalysis, comprises bottom layer of silicon wafer, graphene nanobelt arrays on silicon wafer, and iron-based carbide nanocrystal.

DONG J, FAN X, GUO X, LIU B, LI C, LIU Q