国家/地区 中国（24）
IPC部 C（24）
IPC大类 C30（24） C23（9） C01（8）
H01（8）
IPC小类 C30B（24）
IPC C30B029/02（14） C30B025/18（12） C30B025/02（9）
C23C016/26（7） H01L021/02（5） C01B031/02（4）
C01B031/04（4） H01L021/205（4） C23C014/06（3）
C23C016/02（3） C23C014/35（2） C23C016/52（2）
C30B025/00（2） C30B028/14（2） C30B029/16（2）
发明人 ZHANG Y（14） WANG D（13） HAO Y（12）
ZHANG J（12） GUO H（11） NING J（11）
ZHANG K（10） LEI T（8） CHAI Z（7）
DENG P（7） HAN D（7） YAN Y（7）
TANG X（5） LV J（3） MA P（3）
公开年 2012（11） 2014（4） 2013（3） 2022（3）
申请年 2012（13）  2013（4）  2021（2） 
专利权人 UNIV XIDIAN（24）

Preparing diamond-based gallium nitride epitaxial substrate structure, involves preparing aluminum nitride nucleating layer on diamond substrate, growing graphene layer on surface of copper foil, and transferring onto aluminum nitride nucleation layer.

HAO Y, MA P, WANG D, JIA Y, ZHANG J, WU H, NING J

Transferring gallium oxide epitaxial layer based on van der Waals film comprises e.g. using chemical vapor deposition to make polycrystalline continuous graphene film, extending gallium oxide on graphene film and adhering thermal release adhesive tape to gallium oxide epitaxial layer upper surface.

HAO Y, MA P, ZHANG J, WANG D, CHEN D, NING J

Preparing transferable large size gallium oxide film involves growing graphene on the copper foil substrate, and then removing copper foil substrate, removing graphene of the copper foil substrate transferred to cleaned sapphire substrate.

HAO Y, MA P, JIAO P, WANG D, ZHANG J, FENG Q, ZHANG Y, NING J

Preparing gallium nitride/aluminium gallium nitride (GaN/AlGaN) heterojunction material based on single crystal diamond substrate involves selecting single crystal diamond substrate, coating graphene layer on crystal diamond substrate.

REN Z, ZHANG Y, ZHANG J, NING J, HAO Y

Method for growing gallium nitride/graphene-based magnetron sputtering aluminum nitride during manufacture of device, involves transferring monolayer graphene on aluminum oxide substrate, sputtering aluminum nitride, and heat-treating.

CHEN Z, HAO Y, ZHANG J, LV J, XU S, NING J, REN Z, WANG D, LIN Z

Epitaxial graphene growth and transfer on gallium nitride substrate by chemical vapor deposition and chemical etching involves placing silicon carbide substrate in metal organic chemical vapor deposition reactor and adding ammonia.

HAO Y, NING J, WANG D, ZHANG J, CHAI Z, HAN D, YAN Y

Epitaxial growth method of graphene thin film used for manufacturing graphene device, involves providing substrate into reaction chamber, introducing hydrogen, providing copper, processing, then introducing hydrogen and annealing.

WANG D, ZHANG J, NING J, HAO Y, CHAI Z, HAN D, YAN Y

Metal organic chemical vapor deposition reaction chamber, useful for growing graphene, comprises heating device fixed on bracket, and source inlet and exhaust port that are located at top plate and supporting plate, respectively.

WANG D, ZHANG J, NING J, HAO Y, CHAI Z, HAN D, YAN Y

Preparation of multilayered single crystal graphene involves carrying out electrochemical polishing of copper substrate, washing, drying, placing in reaction chamber, evacuating, filling hydrogen, heating, filling methane, and heating.

SHI Y, HAO Y, WANG D, ZHANG J, CHAI Z, HAN D, YAN Y

Preparation of self-assembly growth micro-nano-scale graphene used as electrode by carrying out electron beam evaporation of transition metal film on substrate, forming transition metal particles and carrying out chemical vapor deposition.

WANG D, ZHANG J, CHAI Z, HAO Y, HAN D, YAN Y, NING J