国家/地区 中国（11） 美国（4）
IPC部 G（14） H（9） C（5）
B（2）
IPC大类 G01（14） H01（9） C08（2）
C23（2）
IPC小类 G01J（14）
IPC G01J005/20（14）
发明人 CAI G（2） FANG M（2） GAO J（2）
HUANG L（2） HUANG S（2） LIU C（2）
LU H（2） MA Z（2） WANG C（2）
WANG Y（2）
公开年 2021（14）
申请年 2021（9）  2020（3）  2019（2） 
专利权人 WUHAN GAOXIN.（2）

Preparation method of a graphene-CMOS monolithic integrated detector chip, involves depositing isolation layer on surface of CMOS integrated circuit, and etching through hole in isolation layer to fill metal.

CHEN H, HUANG Y, ZHANG H, CHENG C, CHEN R, HUANG B

Temperature measuring device for graphene drilling processing, has angle rotating mechanism that drives thermal radiation receiving instrument to rotate along X, Z axis direction of processing main shaft.

LIU X

Germanium-doped long wave infrared terahertz detector array used in e.g. weather forecast, has absorption region array and common electrode which are located on front surface of wafer, and back electrode passivation layer located on barrier sheet electrode.

DAI N, YIN Z, SHAN Y, DOU W, LIU C, WANG Y, DENG H

Method of preparing multilayer structure infrared micro-bridge detector, involves depositing third metal interconnection layer and second dielectric layer, and etching third metal interconnection layer into second patterned electrode structure to form absorber plate.

PAN H, WU P, DI G

Piezoelectric resonant infrared sensor useful for array, comprises piezoelectric material whose upper surface is formed with quantum dot film which can respond to infrared light irradiation to accelerate temperature rise of piezoelectric material.

LUO J, ZHONG H, FENG L, GU K

Composite useful in photoelectric device, thermal sensing device and electronic device for sensing heat or infrared light, comprises block copolymer including e.g. alkyl-based first structural unit, and polyvalent metal ion.

CHOI Y, KIM T H, WANG L, VINCENZO C, ZHUN Z, CHIARA D, DARAIO C, ZHOU Z, COSTANZA V, CHOI Y S

Dual-mode non-refrigeration infrared detector heat-sensitive layer structure, has thermo-sensitive film layer provided with amorphous germanium silicon film, where sides of germanium silicon film are connected with vanadium oxide film.

HUANG L, LU H, MA Z, WANG C, FANG M, CAI G, GAO J, HUANG S

Vanadium pentoxide heat-sensitive film with sandwich structure used for silicon-based semiconductor, comprises substrate layer, buffer layer, and heat-sensitive layer including vanadium pentoxide layers and carrier concentration increasing layer located between adjacent vanadium pentoxide layers.

HUANG L, LU H, MA Z, WANG C, FANG M, CAI G, GAO J, HUANG S

Two-dimensional magnetic film heterojunction non-refrigeration infrared detector has top electrode layer, and transparent top gate insulating layer containing high-dielectric material e.g. hafnium dioxide and poly(methyl methacrylate).

LONG M, WANG R, SHAN L, LI F, HAN T

Infrared photodetector has mesa on substrate and comprising layer of amorphous silicon for amplifying photocurrent, layer of long wave infrared radiation absorbing material for producing photocurrent, and passivation layers.

LO Y, ZHOU J, MIAH M A R, ZHANG Y