国家/地区 美国（10）
IPC部 H（10） B（6）
IPC大类 H01（10） B82（5）
IPC小类 H01L（10） B82Y（5）
IPC H01L021/20（5） H01L029/06（4） B82Y040/00（3）
B82Y099/00（3） H01L029/16（3） H01L029/66（3）
B82Y030/00（2） H01L021/02（2） H01L021/04（2）
H01L029/78（2） H01L029/786（2）
发明人 GRILL A（10）
公开年 2012（10）
申请年 2010（4）  2011（4）  2012（2） 
专利权人 INT BUSINESS.（10）

Crystalline structure for silicon carbide layer, includes graphene layer that is located directly on crystallographic surface having non-hexagonal symmetry.

CHU J O, DIMITRAKOPOULOS C, FREITAG M O, GRILL A, MCARDLE T J, SUNG C, WISNIEFF R L

Semiconductor structure e.g. dual-channel finFET, has graphene nanoribbon located on bare sidewall of silicon carbide fin, where portion of graphene nanoribbon overlapped by gate structure defines channel region of structure.

COHEN G M, DIMITRAKOPOULOS C D, GRILL A, COHEN G, DIMITRAKOPOULOS C

Semiconductor structure, useful in semiconductor device (diodes and bipolar-complementary metal-oxide-semiconductor devices), comprises a silicon carbide substrate, and a graphene layer located on upper surface of silicon carbide substrate.

DIMITRAKOPOULOS C D, GRILL A, MCARDLE T J, OTT J A, WISNIERFF R L

Semiconductor structure for electronic integrated circuit, has dielectric material including conductive region that is in contact with conductive element of graphene containing semiconductor device.

DIMITRAKOPOULOS C D, COHEN G M, GATES S M, GRILL A, MCARDLE T J, SUNG C

Semiconductor structure has semiconductor substrate comprising single crystalline silicon-containing semiconductor material, semiconductor carbide layer and graphene layer including graphene monolayers.

CHU J O, DIMITRAKOPOULOS C D, GRILL A, SUNG C

Semiconductor substrate for e.g. forming semiconductor structure comprises substrate having upper surface and ordered array of parallel graphene nanoribbons located on the upper surface of the substrate.

DIMITRAKOPOULOS C D, GRILL A, MCARDLE T J

Forming a graphene layer on a sapphire substrate involves forming single crystalline semiconductor-carbon alloy layer on sapphire substrate; and forming graphene layer directly on single crystalline semiconductor-carbon alloy layer.

CHU J O, DIMITRAKOPOULOS C D, FREITAG M O, GRILL A, MCARDLE T J, WISNIEFF R L

Structure for use in semiconductor device i.e. FET, of integrated circuit of e.g. cellular phone, has nanoribbon-containing layer settled on upper surface of substrate, where layer includes alternating graphene nanoribbons.

COHEN G, DIMITRAKOPOULOS C D, GRILL A, WISNIEFF R L

Forming structure containing graphene layer involves forming semiconductor islands on surface of single crystalline semiconductor-carbon alloy layer, and annealing the layer, where layer surface becomes vicinal surface.

DIMITRAKOPOULOS C D, FREITAG M O, GRILL A, WISNIEFF R L

Formation of graphene layer used for structure, involves forming graphene layer directly on a crystallographic surface having non-hexagonal symmetry.

CHU J O, DIMITRAKOPOULOS C, FREITAG M O, GRILL A, MCARDLE T J, SUNG C, WISNIEFF R L