国家/地区 日本（17）
IPC部 B（17）
IPC大类 B01（17） C01（16） H01（10）
B82（5） C23（4） C25（3）
B32（2）
IPC小类 B01J（17）
IPC C01B031/02（14） C01B031/04（9） B82Y040/00（5）
B82Y030/00（4） H01M004/96（4） B01J019/08（3）
B01J019/12（3） B01J023/755（3） B01J023/89（3）
B01J037/02（3） H01M008/10（3） B01J023/42（2）
B01J023/72（2） B01J035/02（2） B01J037/08（2）
发明人 HASHIMOTO K（2） KAMIYA K（2） KOBIKI T（2）
MATSUMOTO T（2） MATSUMOTO TAKASHI（2） NAKANISHI S（2）
SAKAGUCHI K（2）
公开年 2013（17）
申请年 2012（10）  2011（4）  2013（3） 
专利权人 PANASONIC CO.（3） HASHIMOTO K（2） JAPAN SCI T.（2） JAPAN SCI TE.（2）
JX NIPPON MI.（2） KAMIYA K（2） NAKANISHI S（2） NIPPON TELEG.（2）
TOKYO ELECTR.（2）

Manufacture of graphene used for manufacture of graphene junction, involves applying load to aggregated-form graphite particles, such that interlayer bonding of all graphite crystals of aggregated-form graphite particles is destroyed.

KOBAYASHI H

Processing of graphene used for manufacture of graphene nanoribbons, involves irradiating ion beam to graphene using gas cluster ion beam apparatus, forming cluster and etching.

MATSUMOTO TAKASHI, MATSUMOTO T

Preparing graphene used in e.g. memory device, comprises forming organic thin film on substrate, irradiating upper portion of organic thin film with radiation to cross-link organic thin film, and then carbonizing.

CHOI J H, JUNG C H, HWANG I T, KANG D W

Manufacture of catalyst metal layer for manufacturing graphene raw material used for transistor, involves forming film of catalyst metal, heating catalyst metal in high-temperature area and reducing temperature of catalyst metal.

NARITSUKA S, MARUYAMA T

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

Composite carbon material used for forming electrode catalyst and for fuel cell, capacitor and exhaust gas purifying catalyst, is obtained by alternately laminating graphene and carbon nanoribbon.

WANG H L, YAMAGUCHI T, TAMAKI T, OHASHI S, BALACHANDRA K

Graphene film used for manufacturing graphene device for low power consumption, has substrate, catalyst metal which is osmium arranged on substrate, and graphene arranged on catalyst metal.

TOYODA K

Manufacture of nanowire for optical element, involves forming metal microparticles on graphene, and forming nanowire of specific group compound by organometallic vapor phase epitaxy.

TATENO K, SASAKI S, HIBINO H, ZHANG G Q, SHO K

Carbonaceous material used for e.g. electrode catalyst, comprises graphene doped with metal atom and at least one type of nonmetallic atom chosen from nitrogen atom, boron atom, sulfur atom, and phosphorus atom.

NAKANISHI S, KAMAI R, SUZUKI Y, HASHIMOTO K, KAMIYA K

Nitrate-reduction method for water treatment and electric power generation, involves performing reductive reaction to nitrate ion and/or nitrite ion in presence of carbonaceous material including graphite, graphene and amorphous carbon.

NAKANISHI S, HASHIMOTO K, KAMIYA K