国家/地区 韩国（9） 美国（4） 中国（3） 世界知识产权组织（3） 欧洲专利局（EPO）（2）
IPC部 C（14）
IPC大类 C01（14）
IPC小类 C01B（14）
IPC C01B032/194（9） G03F001/62（7） C01B032/184（5）
G03F007/20（5） G03F001/22（4） B01J019/08（3）
C01B032/182（3） G03F007/16（3） B82Y030/00（2）
C01B032/186（2） C23C016/26（2） G03F007/32（2）
H01L021/285（2）
发明人 KIM K S（3） LEE S Y（3） CHO S J（2）
CHOI J H（2） KIM C（2） KIM H（2）
KIM H Y（2） KIM S K（2） KIMCHUNG（2）
LEE S M（2） MI K H（2） MOON S Y（2）
SEO K（2） SEO K W（2） YU L（2）
公开年 2022（14）
申请年 2021（6）  2022（6）  2020（2） 
专利权人 FINE SEMITEC.（2） KOREA ELECTR.（2）

Photoetching of erasable graphene involves photoetching oxidation graphene by laser processing, graphene, and performing oxygen plasma treatment to oxidized graphene after laser treatment.

GU M, ZHANG Q, CHEN X, LUAN H, WAN Z

Repairing layers of laminate stack or printed circuit board, comprises providing layered structure, identifying fault location in outer graphene layer, preparing surface of outer graphene layer, and applying localized heat on fault location.

MENTOVICH E, ATIAS B, NAVEH D, LEVI A, SMOLINSKY E Z B

Direct growth method of multilayer graphene through pressure heat treatment, comprises forming etch stop layer, forming metal catalyst layer, forming amorphous carbon layer and directly growing multilayer graphene on seed layer.

KIM H, KIM S K, MI K H, YOO C S, JOJINWOO, KIM H Y, JEONJUNHYUCK, YUNSUNGHO, SUNG K H, LEE S M

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Manufacturing graphene thin film for pellicle material using ozone gas useful in semiconductor devices comprises forming graphene on the upper surface of substrate, exposing graphene layer to ozone, and heat-treating and etching.

LEE G H, KWON Y, WOOK Y B, MOON S I, MOON J, KIM K S, LEE S M

Pellicle film used for extreme UV lithography, comprises boron nitride nanostructure layer.

CHOI J H, CHO S J, YU L, KIM C, LEE S Y, SEO K W, KIM K S, MOON S Y, KIMCHUNG, SEO K

Manufacturing graphene wrinkles using three-dimensional structure patterning process comprises etching transition metal thin film to form three-dimensional pattern and inserting into chemical vapor deposition chamber to synthesize graphene.

KIM J, WIMALANANDA M D S, LEE J M

Optical element for use with electromagnetic radiation at specific wavelength in ultraviolet, extreme ultraviolet or soft X-ray bands, comprises reflective, transmissive, protective, interdispersed or capping layer coating with materials.

JAISWAL S

Producing pellicle structure useful for protecting photomask in semiconductor integrated circuits, comprises e.g. forming lower protective layer on entire surface of substrate, and forming amorphous thin film on lower protective layer.

KIM K B